Temperature dependence of excitonic emission in CuInSe2

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Yakushev, M. V. and Martin, R. W. and Mudryi, A. V. (2009) Temperature dependence of excitonic emission in CuInSe2. Physica Status Solidi C, 6 (5). pp. 1082-1085. ISSN 1610-1642 (https://doi.org/10.1002/pssc.200881155)

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Abstract

Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the, vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spectroscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm(2). Study of the quenching parameters of the A and B freeo and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons.

ORCID iDs

Yakushev, M. V., Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X and Mudryi, A. V.; Sadewasser, S, AbouRas, D, Lake, B and Schock, HW
  • Item type:Article
    ID code:37428
    Dates:
    Date
    Event
    2009
    Published
    Notes:Special Issue: 16th International Conference on Ternary and Multinary Compounds (ICTMC16)
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:07 Feb 2012 10:21
    Last modified:11 Nov 2024 10:04
    URI:https://strathprints.strath.ac.uk/id/eprint/37428
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