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Microscopic characterisation of luminescent III-N:RE epilayers

Martin, Robert (2010) Microscopic characterisation of luminescent III-N:RE epilayers. In: Rare Earth Doped III-Nitrides For Optoelectronic And Spintronic Applications. Topics in Applied Physics . Springer-Verlag Berlin, Berlin, pp. 189-219. ISBN 978-90-481-2876-1

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Study of the luminescence of Rare Earth ions introduced into III-nitride semiconductor hosts produces a wealth of important information. This chapter describes investigations of photoluminescence and cathodoluminescence spectroscopy on a range of RE-implanted samples, with hosts including GaN, AlGaN and AlInN. Raising the post-implantation annealing temperature is shown to lead to a dramatic increase in RE luminescence intensity, and methods to allow annealing well above the growth temperature of the host are discussed. The high-brightness samples that result enable the resolution of additional fine-structure in the luminescence from GaN:Eu and clarification of multiple sites for the RE. Measurements for AlGaN hosts covering the entire composition range point to the importance of core-excitons in the luminescence process. Adding in information from X-ray microanalysis and high spatial resolution luminescence mapping reveals further details of the effects resulting from annealing and of changes in host composition.