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Optical properties of high quality Cu2ZnSnSe4 thin films

Luckert, F. and Hamilton, D. I. and Yakushev, M. V. and Beattie, N. S. and Zoppi, G. and Moynihan, M. and Forbes, I. and Karotki, A. V. and Mudryi, A. V. and Grossberg, M. and Krustok, J. and Martin, R. W. (2011) Optical properties of high quality Cu2ZnSnSe4 thin films. Applied Physics Letters, 99 (6). -. ISSN 0003-6951

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    Abstract

    Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.

    Item type: Article
    ID code: 34031
    Keywords: photoluminescence, selenisation, dependence, energy, copper compounds, excitons, phonons, photoionisation, Raman spectra, semiconductor thin films, sputter deposition, tin compounds, zinc compounds, TIC - Bionanotechnology, Optics. Light, Physics and Astronomy (miscellaneous)
    Subjects: Science > Physics > Optics. Light
    Department: Faculty of Science > Physics
    Technology and Innovation Centre > Bionanotechnology
    Technology and Innovation Centre > Photonics
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    Depositing user: Pure Administrator
    Date Deposited: 19 Oct 2011 15:00
    Last modified: 27 Mar 2014 19:36
    URI: http://strathprints.strath.ac.uk/id/eprint/34031

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