Gleskova, Helena and Wagner, S. (1995) Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? Journal of Non-crystalline Solids, 190 (1-2). pp. 157-162. ISSN 0022-3093
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.
| Item type: | Article |
|---|---|
| ID code: | 33418 |
| Notes: | Invited journal contribution |
| Keywords: | metastable defects , annealing, electrons, non-crystalline solids, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 13 Oct 2011 14:33 |
| Last modified: | 04 Oct 2012 13:52 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33418 |
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