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Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Gleskova, Helena and Wagner, S. (1995) Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? Journal of Non-crystalline Solids, 190 (1-2). pp. 157-162. ISSN 0022-3093

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Abstract

Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.

Item type: Article
ID code: 33418
Notes: Invited journal contribution
Keywords: metastable defects , annealing, electrons, non-crystalline solids, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 13 Oct 2011 14:33
    Last modified: 04 Oct 2012 13:52
    URI: http://strathprints.strath.ac.uk/id/eprint/33418

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