Stability of amorphous silicon thin-film transistors deposited on clear plastic substrates at 250ºC to 280ºC

Long, K. and Kattamis, A.Z. and Cheng, I-C. and Gleskova, H. and Wagner, S. and Sturm, J.C. (2006) Stability of amorphous silicon thin-film transistors deposited on clear plastic substrates at 250ºC to 280ºC. IEEE Electron Device Letters, 27 (2). pp. 111-113.

Abstract

Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of >315° C and low coefficient of thermal expansion of <10 ppm/ ° C. Maximum process temperatures on the substrates were 250°C and 280°C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280°C have dc characteristics comparable to TFTs made on glass. The stability of the 250°C TFTs on clear plastic is approaching that of TFTs made on glass at 300°C-350°C. TFT characteristics and stability depend only on process temperature and not on substrate type.

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