Karotki, A. V. and Mudryi, A.V. and Yakushev, Michael V and Luckert, Franziska and Martin, Robert (2010) Structural and optical properties of CdS/Cu(In,Ga)Se-2 heterostructures irradiated by high energy electrons. Journal of Applied Spectroscopy, 77 (5). pp. 668-674. ISSN 0021-9037Full text not available in this repository. (Request a copy from the Strathclyde author)
Thin films of Cu(In, Ga)Se-2 (CIGS) with a Ga/(Ga + In) ratio of similar to 0.27 corresponding to the standard elemental composition for solar-energy transducers were grown on Mo-coated glass substrates by the Cu, In, Ga, and Se co-evaporation technique from different sources. Transmission (T), photoluminescence (PL), and photoluminescence excitation (PLE) spectra at 4.2 K were used to analyze electronic properties in the asgrown and electron-irradiated CIGS films. The band-gap energy (E-g) of the CIGS films measured using both transmission and PLE methods was found to be about 1.28 eV at 4.2 K. Two deep bands in the PL spectra of the irradiated CIGS films, P-1 at similar to 0.91 eV and P-2 at similar to 0.77 eV, have been detected. These bands are tentatively associated with copper atoms substituting indium (Cu-In) and indium vacancies V-In, respectively, as the simplest radiation-induced defects.
|Keywords:||Cu(In,Ga)Se2 , photoluminescence, electron irradiation, defects, Therapeutics. Pharmacology, Spectroscopy, Condensed Matter Physics|
|Subjects:||Medicine > Therapeutics. Pharmacology|
|Department:||Faculty of Science > Physics|
|Depositing user:||Pure Administrator|
|Date Deposited:||10 Aug 2011 13:06|
|Last modified:||27 Apr 2016 17:04|