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Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors

Trager-Cowan, Carol (2005) Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors. In: Physica status solidi C - conferences and critical reviews. Physica status solidi c - current topics in solid state physics . Wiley-VCH, Weinheim, pp. 2240-2245.

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Abstract

The following is a report on the Evening Rump Session on InN held as part of the 2004 International Workshop on Nitride Semiconductors. It summarises (1) the presentations given by the 5 panellists covering data generated from theory and a wide range of experimental techniques relating to the properties of InN, in particular its bandgap and (2) the subsequent discussion. The most recent parameter-free electronic-structure calculations predict a value for the InN bandgap of 0.8 +/- 0.4 eV; experimental results obtained from a wide range of InN samples point to a bandgap around 0.7 eV, or to a bandgap around 1.3 eV. The interpretation of available data is hotly contested, not surprisingly a definitive conclusion on the true value of the bandgap of InN was not reached during the Rump Session. It was agreed that InN is a difficult material to grow and its properties vary depending on how and where it is grown. However with mobilities of order 4000 cm(2)/Vs, high saturation velocities and the absorption wavelengths of InGaN spanning the visible, InN is a material with huge potential.