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Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

Katchkanov, V and Mosselmans, J F W and O'Donnell, K P and Nogales, E and Hernandez, S and Martin, R W and Steckl, A and Lee, D S (2006) Extended X-ray absorption fine structure studies of GaN epilayers doped with Er. Optical Materials, 28 (6-7). pp. 785-789.

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Abstract

The structural properties of Er doped GaN epilayers were studied by means of extended X-ray absorption fine structure (EXAFS) measured at the Er L-III and Ga K-edges. The samples were doped with Er in-situ during growth by molecular beam epitaxy (MBE). The Ga local structure was found to be the same in all samples studied. Er L-III-edge EXAFS showed that when growth conditions were gradually changed from Ga-rich to Ga-poor, an increase in Er concentration from 0.15 at.% to 0.64 at.% is accompanied by the sequential formation of ErGaN, ErGaN clusters with locally high Er content and finally a pure ErN component. This study indicates that Er incorporation into GaN is enhanced under Ga-poor conditions, at the expense of the formation of Er-rich clusters and ErN precipitates. (c) 2005 Elsevier B.V. All rights reserved.

Item type: Article
ID code: 31051
Notes: Meeting of the European-Materials-Research-Society, Strasbourg, FRANCE, MAY 30-JUN 03, 2005
Keywords: absorption, optical materials, molecular beams, Optics. Light, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Computer Science(all)
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics
Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 22 Jun 2011 13:09
    Last modified: 05 Sep 2014 08:51
    URI: http://strathprints.strath.ac.uk/id/eprint/31051

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