MOCVD growth and characterisation of ZnS/ZnSe distributed Bragg reflectors and ZnCdSe/ZnSe heterostructures for green VCSEL

Kuznetsov, P I and Shchamkhalova, B S and Jitov, V A and Yakushcheva, G G and Kozlovsky, V I and O'Donnell, K P and Trager-Cowan, C and Edwards, P R (2001) MOCVD growth and characterisation of ZnS/ZnSe distributed Bragg reflectors and ZnCdSe/ZnSe heterostructures for green VCSEL. Physics of Low-Dimensional Structures, 11 (2). pp. 271-278. ISSN 0204-3467

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Abstract

High reflectivity ZnS/ZnSe distributed Bragg reflectors (DBR) have been grown on GaAs(100) substrates using metallorganic chemical vapour deposition technique. It was found that the surface roughness, which limits the ZnS/ZnSe DBR mirror reflectivity, may be reduced using the interruption of chalcogen-contained flow before each successive layer growth. The DBR mirrors have been obtained with reflectivity as high as 99% and 94% at the wavelengths of 478 nm and 520 nm, respectively. The ZnCdSe/ZnSe QW structure grown on the ZnS/ZnSe DBR mirror manifests cathodoluminescence at room temperature whose intensity is an order of magnitude less than that of the similar structure grown on ZnSe buffer. Large lattice mismatch between ZnS and ZnSe layers results in high density of defects in ZnCdSe/ZnSe QW structures grown on. the DBR.

ORCID iDs

Kuznetsov, P I, Shchamkhalova, B S, Jitov, V A, Yakushcheva, G G, Kozlovsky, V I, O'Donnell, K P ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Trager-Cowan, C ORCID logoORCID: https://orcid.org/0000-0001-8684-7410 and Edwards, P R ORCID logoORCID: https://orcid.org/0000-0001-7671-7698;
  • Item type:Article
    ID code:30543
    Dates:
    Date
    Event
    2001
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:18 May 2011 15:13
    Last modified:11 Nov 2024 09:43
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/30543
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