Halambalakis, G and Rousseau, N and Briot, O and Ruffenach, S and Aulombard, R L and Edwards, P R and O'Donnell, K P and Wojtowicz, T and Ruterana, P (2004) Growth and characterisation of Eu doped GaN thin films. Superlattices and Microstructures, 36 (4-6). pp. 721-728.Full text not available in this repository. (Request a copy from the Strathclyde author)
We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.
|Keywords:||photoluminescence, emission, cathodoluminescence, optical properties, Optics. Light, Materials Science(all), Electrical and Electronic Engineering, Condensed Matter Physics|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Physics|
|Depositing user:||Pure Administrator|
|Date Deposited:||17 Apr 2011 04:10|
|Last modified:||04 May 2016 18:12|