Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond

Lohstroh, A. and Sellin, P. J. and Wang, S. G. and Davies, A. W. and Parkin, J. and Martin, R. W. and Edwards, P. R. (2007) Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond. Applied Physics Letters, 90 (10). 102111. ISSN 0003-6951 (https://doi.org/10.1063/1.2711754)

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Abstract

The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal.

ORCID iDs

Lohstroh, A., Sellin, P. J., Wang, S. G., Davies, A. W., Parkin, J., Martin, R. W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X and Edwards, P. R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698;
  • Item type:Article
    ID code:30531
    Dates:
    Date
    Event
    7 March 2007
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:18 May 2011 13:47
    Last modified:16 Nov 2024 12:05
    URI:https://strathprints.strath.ac.uk/id/eprint/30531
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