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Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays

Edwards, P.R. and Martin, R.W. and Watson, I.M. and Liu, C. and Taylor, R.A. and Rice, J.H. and Na, J.H. and Robinson, J.W. and Smith, J.D. (2004) Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays. Applied Physics Letters, 85 (19). pp. 4281-4283. ISSN 0003-6951

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InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5 ns, with linewidths down to 650 meV

Item type: Article
ID code: 3003
Keywords: quantum dot emission, InGaN/GaN micropyramid arrays, nanoscience, Solid state physics. Nanoscience, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Depositing user: Strathprints Administrator
Date Deposited: 12 Mar 2007
Last modified: 21 Oct 2015 20:14

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