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Identification of the prime optical center in GaN:Eu3+

Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Edwards, P.R. and Song, S.F. and Vantomme, A. and Lorenz, K. and Alves, E. and Boćkowski, M. (2010) Identification of the prime optical center in GaN:Eu3+. Physical Review B, 81 (1). ISSN 1098-0121

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Abstract

We identify a dominant light-emitting center in ion-implanted GaN:Eu3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional EuGa defect. It lacks a 'subgap' excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its 7F2 level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.