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Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers

Kim, T. and Martin, R.W. and Watson, I.M. and Dawson, M.D. and Krauss, T.F. and Marsh, J.H. and De La Rue, R.M. (2001) Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers. Materials Science and Engineering B, 82 (1-3). pp. 245-247. ISSN 0921-5107

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Abstract

The performance of GaN-based surface-emitting lasers may be greatly improved by the use of highly-reflecting SiO2/ZrO2 multilayers for both cavity mirrors. We consider some of the limitations of GaN/Al(Ga)N multilayer mirrors and discuss alternative routes for incorporating dielectric multilayers within InGaN/GaN quantum well surface-emitting devices, using lateral epitaxial overgrowth. The use of lateral overgrowth techniques promise the benefit of reduced dislocation densities within the active region. The use of single layer lift-off techniques for the fabrication of patterned mirror templates suitable for overgrowth on GaN-on-sapphire is described.

Item type: Article
ID code: 23888
Keywords: nitride semiconductors, VCSELs, microcavities, oxide mirrors, Physics, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 07 Jul 2010 15:28
    Last modified: 05 Sep 2014 04:33
    URI: http://strathprints.strath.ac.uk/id/eprint/23888

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