Kim, T. and Martin, R.W. and Watson, I.M. and Dawson, M.D. and Krauss, T.F. and Marsh, J.H. and De La Rue, R.M. (2001) Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers. Materials Science and Engineering B, 82 (1-3). pp. 245-247. ISSN 0921-5107
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
The performance of GaN-based surface-emitting lasers may be greatly improved by the use of highly-reflecting SiO2/ZrO2 multilayers for both cavity mirrors. We consider some of the limitations of GaN/Al(Ga)N multilayer mirrors and discuss alternative routes for incorporating dielectric multilayers within InGaN/GaN quantum well surface-emitting devices, using lateral epitaxial overgrowth. The use of lateral overgrowth techniques promise the benefit of reduced dislocation densities within the active region. The use of single layer lift-off techniques for the fabrication of patterned mirror templates suitable for overgrowth on GaN-on-sapphire is described.
| Item type: | Article |
|---|---|
| ID code: | 23888 |
| Keywords: | nitride semiconductors, VCSELs, microcavities, oxide mirrors, Physics |
| Subjects: | Science > Physics |
| Department: | Faculty of Science > Physics Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 07 Jul 2010 15:28 |
| Last modified: | 12 Mar 2012 11:14 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/23888 |
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