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Excited states of the A free exciton in CuInS2

Yakushev, M.V. and Martin, R.W. and Mudryi, A.V. and Ivaniukovich, A.V. (2008) Excited states of the A free exciton in CuInS2. Applied Physics Letters, 92 (11). ISSN 0003-6951

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High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2 K. The first, EAn=2=1.5494 eV, and second, EAn=3=1.5532 eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy EFE A =18.5 meV and Bohr radius aB A=3.8 nm, bandgap Eg=1.5540 eV at 4.2 K and static dielectric constant =10.2 have been derived assuming a hydrogenic model.