Bejtka, K. and Reveret, F. and Martin, R.W. and Edwards, Paul and Vasson, A. and Leymarie, J. and Sellers, I.R. and Duboz, J.Y. (2008) Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities. Applied Physics Letters, 92 (24). p. 241105. ISSN 0003-6951
Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.
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