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Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

Bejtka, K. and Reveret, F. and Martin, R.W. and Edwards, Paul and Vasson, A. and Leymarie, J. and Sellers, I.R. and Duboz, J.Y. (2008) Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities. Applied Physics Letters, 92 (24). p. 241105. ISSN 0003-6951

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    Abstract

    Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The λ/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43±2 meV and 56±2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.

    Item type: Article
    ID code: 19621
    Notes: Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.
    Keywords: semiconductor microcavities, photoluminescence, light-matter coupling, double dielectric mirror, GaN, Optics. Light
    Subjects: Science > Physics > Optics. Light
    Department: Faculty of Science > Physics
    Related URLs:
      Depositing user: Strathprints Administrator
      Date Deposited: 27 May 2010 13:00
      Last modified: 12 Jul 2012 01:48
      URI: http://strathprints.strath.ac.uk/id/eprint/19621

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