Roqan, I.S. and Nogales, E. and O'Donnell, K.P. and Trager-Cowan, C. and Martin, R.W. and Halambalakis, G. and Briot, O. (2008) The effect of growth temperature on the luminescence and structural properties of gan : tm films grown by gas-source mbe. Journal of Crystal Growth, 310 (18). pp. 4069-4072. ISSN 0022-0248Full text not available in this repository. (Request a copy from the Strathclyde author)
During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp Tm3+ emission. For lower substrate temperatures, Ga droplets and large (8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (0.8 at%).
|Keywords:||atomic force microscopy, X-ray topography, molecular beam epitaxy, rare earth compounds, semiconducting gallium compounds, Physics, Materials Chemistry, Inorganic Chemistry, Condensed Matter Physics|
|Subjects:||Science > Physics|
|Department:||Faculty of Science > Physics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||09 Jun 2010 09:46|
|Last modified:||04 May 2016 15:26|