Wang, K. and O'Donnell, K.P. and Hourahine, B. and Martin, R.W. and Watson, I.M. and Lorenz, K. and Alves, E. (2009) Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range. Physical Review B, 80 (12). ISSN 1098-0121
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.
| Item type: | Article |
|---|---|
| ID code: | 18942 |
| Keywords: | rare-earth ions, iii-v semiconductors, tm-doped alxga1-xn, implanted gan, optical-properties, temperature, aln, photoluminescence, intensities, excitation, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Physics Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 10 Jun 2010 16:51 |
| Last modified: | 24 Oct 2012 14:59 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/18942 |
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