Jamison, S.P. and Ersfeld, B. and Jaroszynski, D.A. (2004) Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation. Current Applied Physics, 4 (2-4). pp. 217-220. ISSN 1567-1739
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.
| Item type: | Article |
|---|---|
| ID code: | 18238 |
| Keywords: | THz generation, photoconductive, spectral hole burning, Physics |
| Subjects: | Science > Physics |
| Department: | Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 01 Apr 2010 14:34 |
| Last modified: | 12 Mar 2012 11:09 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/18238 |
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