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Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation

Jamison, S.P. and Ersfeld, B. and Jaroszynski, D.A. (2004) Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation. Current Applied Physics, 4 (2-4). pp. 217-220. ISSN 1567-1739

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Abstract

Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

Item type: Article
ID code: 18238
Keywords: THz generation, photoconductive, spectral hole burning, Physics, Physics and Astronomy(all), Materials Science(all)
Subjects: Science > Physics
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 01 Apr 2010 14:34
    Last modified: 05 Sep 2014 01:22
    URI: http://strathprints.strath.ac.uk/id/eprint/18238

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