Jamison, S.P. and Ersfeld, B. and Jaroszynski, D.A. (2004) Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation. Current Applied Physics, 4 (2-4). pp. 217-220. ISSN 1567-1739Full text not available in this repository. (Request a copy from the Strathclyde author)
Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.
|Keywords:||THz generation, photoconductive, spectral hole burning, Physics, Physics and Astronomy(all), Materials Science(all)|
|Subjects:||Science > Physics|
|Department:||Faculty of Science > Physics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||01 Apr 2010 13:34|
|Last modified:||27 Apr 2016 14:29|