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In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride

Fisher, J.M. and Berlouis, L.E.A. and Rospendowski, B.N. and Hall, P.J. and Astles, M.G. (1993) In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride. Semiconductor Science and Technology, 8 (7). pp. 1459-1464. ISSN 0268-1242

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Abstract

The electrodeposition of CdTe on CdxHg1-xTe is carried out from aqueous solutions at 55 degrees C and the film growth is monitored using in situ ellipsometry. The measurements reveal that, at a growth potential of -0.55 V versus SCE, a thin (120 AA) Te layer is initially formed on the surface followed by the growth of the CdTe film (1.8 mu m) which appears to be of uniform composition for most of its thickness. Further analysis of the film using the techniques of Raman spectroscopy, differential scanning calorimetry (DSC) and energy dispersive X-ray analysis (EDAX) confirm the excess tellurium in the electrodeposited film. The EDAX measurements after electrodeposition also reveal the presence of 2-8% Hg in the film depending on the depth of analysis. The presence of Hg in the film can only be explained by the diffusion of Hg from the substrate through the electrodeposited layer.