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Two-photon absorption from single InGaN/GaN quantum dots

Jarjour, A.F. and Green, A.M. and Parker, T.J. and Taylor, R.A. and Oliver, R.A. and Briggs, G.A.D. and Kappers, M.J. and Humphreys, C.J. and Martin, R.W. and Watson, I.M. (2006) Two-photon absorption from single InGaN/GaN quantum dots. Physica E: Low-dimensional Systems and Nanostructures, 32 (1-2). pp. 119-122.

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Abstract

We present a study of the time-integrated and time-resolved photoluminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study.

Item type: Article
ID code: 10020
Keywords: InGaN, quantum dot, two-photon absorption, photoluminescence, time-resolved, photoluminescence excitation, Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 08 Nov 2011 11:36
    Last modified: 04 Oct 2012 12:33
    URI: http://strathprints.strath.ac.uk/id/eprint/10020

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