Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Burns, D. and Calvez, S. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M. and , Institution of Engineering and Technology (2004) Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm. Electronics Letters, 40 (15). pp. 935-937. ISSN 0013-5194
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1049/el:20045378
Abstract
What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.
| Item type: | Article |
|---|---|
| ID code: | 10012 |
| Keywords: | diamond, elemental semiconductors, gallium arsenide, gallium compounds, indium compounds, laser mirrors, microchip lasers, surface emitting lasers, wide band gap semiconductors, Physics |
| Subjects: | Science > Physics |
| Department: | Unknown Department Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 12 May 2010 11:17 |
| Last modified: | 04 Oct 2012 12:30 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/10012 |
Actions (login required)
| View Item |