Radio-frequency reflectometry in silicon carbide large-area transistors

Tools

Zotov, Alexander and McGeough, Conor and Powell, Megan and Rossi, Alessandro (2026) Radio-frequency reflectometry in silicon carbide large-area transistors. Other. arXiv. (https://doi.org/10.48550/arXiv.2605.15389)

[thumbnail of Zotov-etal-arXiv-2026-Radio-frequency-reflectometry-in-silicon-carbide-large-area-transistors]
Preview
 Text. Filename: Zotov-etal-arXiv-2026-Radio-frequency-reflectometry-in-silicon-carbide-large-area-transistors.pdf
Final Published Version
License: Creative Commons Attribution 4.0 logo
Download (771kB)| Preview

Abstract

Radio-frequency (RF) reflectometry is widely used for high-bandwidth readout of semiconductor quantum devices at cryogenic temperatures, but its application has mainly been limited to nanoscale structures with relatively small capacitances. Here, we investigate RF readout in a different regime by applying gate-based reflectometry to a large-area silicon carbide transistor with parasitic capacitances orders of magnitude larger than those of typical quantum devices, conditions normally expected to hinder RF readout. We observe a gate-dependent RF response which degrades and eventually vanishes as temperature is lowered, although MOSFET operation in DC transport is maintained down to deep cryogenic temperatures. We attribute this behaviour to impedance changes introduced by carrier freeze-out in the transistor drift region, and propose a modified circuit configuration designed to restore sensitivity under these conditions. These results establish how parasitic pathways and device geometry can limit RF readout, providing insight into the design of scalable cryogenic-CMOS quantum systems.

ORCID iDs

Zotov, Alexander, McGeough, Conor ORCID logoORCID: https://orcid.org/0000-0003-0854-6860, Powell, Megan ORCID logoORCID: https://orcid.org/0009-0002-2801-5274 and Rossi, Alessandro ORCID logoORCID: https://orcid.org/0000-0001-7935-7560;
CORE (COnnecting REpositories)