Microanalysis of β-(AlxGa1-x)2O3 films grown by MOCVD

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Maruzane, Mugove and Nandi, Arpit and Douglas, Sean and Penman, Lewis and Vanjari, Sai Charan and Sanyal, Indraneel and Smith, Matthew and Martin, Robert W. and Kuball, Martin and Massabuau, Fabien C. P. (2026) Microanalysis of β-(AlxGa1-x)2O3 films grown by MOCVD. Materials, 19 (4). 672. ISSN 1996-1944 (https://doi.org/10.3390/ma19040672)

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Abstract

A combined microanalysis and optical study of β-(AlxGa1−x)2O3 films grown on sapphire via metalorganic chemical vapour deposition, with thickness 350–1000 nm and Al fraction (x) from 0% to 45%, is presented. Al incorporation in the films showed a linear relation with nominal Al composition calculated from precursor flow rate, and the optical bandgap increased from 4.96 eV to 5.44 eV with a bowing parameter of 1.7 ± 0.5 eV. A high Al fraction led to reduced crystallinity, increased surface roughness, and diminished cathodoluminescence intensity. The topography revealed elongated surface features that evolved with Al content, and luminescence spectra exhibited a blueshift in peak emission attributed to the widening of the bandgap. These findings highlight the trade-off between bandgap tuning and material quality, informing future growth strategies for future electronic and optical devices.

ORCID iDs

Maruzane, Mugove, Nandi, Arpit, Douglas, Sean ORCID logoORCID: https://orcid.org/0009-0002-8729-2554, Penman, Lewis ORCID logoORCID: https://orcid.org/0000-0002-0147-9995, Vanjari, Sai Charan, Sanyal, Indraneel, Smith, Matthew, Martin, Robert W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Kuball, Martin and Massabuau, Fabien C. P. ORCID logoORCID: https://orcid.org/0000-0003-1008-1652;
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