Characterisation of commercial SiC MOSFETs at deep-cryogenic temperatures

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Powell, Megan and Parry, Euan and McGeough, Conor and Zotov, Alexander and Rossi, Alessandro (2025) Characterisation of commercial SiC MOSFETs at deep-cryogenic temperatures. Other. arXiv, Ithaca, NY. (https://doi.org/10.48550/arXiv.2507.23109)

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Abstract

Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through its crystal defects, which can act as spin-based qubits or single-photon sources. In this work, we assess the cryogenic performance of commercial power MOSFETs to evaluate their suitability for CMOS-compatible quantum electronics. We perform a statistical study of threshold voltage and subthreshold swing from 300 K down to 650 mK, focusing on reproducibility and variability. Our results show significant performance degradation at low temperatures, including large gate hysteresis, threshold voltage shifts, and subthreshold swing deterioration. These effects suggest instability in electrostatic control, likely due to carrier freeze-out and high interface trap density, which may pose challenges for the reliable use of this transistor technology towards the realisation of quantum devices or cryo-CMOS electronics.

ORCID iDs

Powell, Megan ORCID logoORCID: https://orcid.org/0009-0002-2801-5274, Parry, Euan, McGeough, Conor ORCID logoORCID: https://orcid.org/0000-0003-0854-6860, Zotov, Alexander and Rossi, Alessandro ORCID logoORCID: https://orcid.org/0000-0001-7935-7560;
  • Item type:Monograph(Other)
    ID code:93673
    Dates:
    Date
    Event
    30 July 2025
    Published
    Notes:9 pages, 7 figures, includes appendix with extended datasets
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:04 Aug 2025 11:48
    Last modified:10 Aug 2026 00:10
    URI:https://strathprints.strath.ac.uk/id/eprint/93673
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