Energy band diagram of device-grade silicon nanocrystals
Macias-Montero, M. and Askari, S. and Mitra, S. and Rocks, C. and Ni, C. and Svrcek, V. and Connor, P. A. and Maguire, P. and Irvine, J. T. S. and Mariotti, D. (2016) Energy band diagram of device-grade silicon nanocrystals. Nanoscale, 8 (12). pp. 6623-6628. ISSN 2040-3372 (https://doi.org/10.1039/c5nr07705b)
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Abstract
Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott–Schottky analysis, are employed to determine the energy band diagram of the Si NCs.
ORCID iDs
Macias-Montero, M., Askari, S., Mitra, S., Rocks, C., Ni, C., Svrcek, V., Connor, P. A., Maguire, P., Irvine, J. T. S. and Mariotti, D. ORCID: https://orcid.org/0000-0003-1504-4383;-
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Item type: Article ID code: 90271 Dates: DateEvent28 March 2016Published23 February 2016Published Online22 February 2016AcceptedSubjects: Science > Physics > Solid state physics. Nanoscience
Science > Physics > Plasma physics. Ionized gases
Science > Chemistry > CrystallographyDepartment: Faculty of Engineering > Design, Manufacture and Engineering Management Depositing user: Pure Administrator Date deposited: 16 Aug 2024 09:35 Last modified: 03 Oct 2024 09:45 URI: https://strathprints.strath.ac.uk/id/eprint/90271