Varying surface chemistries for p-doped and n-doped silicon nanocrystals and impact on photovoltaic devices
Velusamy, Tamilselvan and Mitra, Somak and Macias-Montero, Manuel and Svrcek, Vladimir and Mariotti, Davide (2015) Varying surface chemistries for p-doped and n-doped silicon nanocrystals and impact on photovoltaic devices. ACS Applied Materials and Interfaces, 7 (51). pp. 28207-28214. ISSN 1944-8252 (https://doi.org/10.1021/acsami.5b06577)
Preview |
Text.
Filename: Velusamy-etal-ACS-AMI-2015-Varying-surface-chemistries-for-p-doped-and-n-doped-silicon-nanocrystals.pdf
Final Published Version License: Download (4MB)| Preview |
Abstract
Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.
ORCID iDs
Velusamy, Tamilselvan, Mitra, Somak, Macias-Montero, Manuel, Svrcek, Vladimir and Mariotti, Davide ORCID: https://orcid.org/0000-0003-1504-4383;-
-
Item type: Article ID code: 90245 Dates: DateEvent30 December 2015Published1 December 2015Published Online1 December 2015AcceptedSubjects: Science > Physics > Solid state physics. Nanoscience Department: Faculty of Engineering > Design, Manufacture and Engineering Management Depositing user: Pure Administrator Date deposited: 14 Aug 2024 10:12 Last modified: 22 Sep 2024 01:27 URI: https://strathprints.strath.ac.uk/id/eprint/90245