Type-I alignment in MAPbI3 based solar devices with doped-silicon nanocrystals
Rocks, Conor and Svrcek, Vladimir and Velusamy, Tamilselvan and Macias-Montero, Manuel and Maguire, Paul and Mariotti, Davide (2018) Type-I alignment in MAPbI3 based solar devices with doped-silicon nanocrystals. Nano Energy, 50. pp. 245-255. ISSN 2211-2855 (https://doi.org/10.1016/j.nanoen.2018.05.036)
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Abstract
In this work we couple silicon nanocrystals (Si NCs) with strong quantum confinement (< 4 nm diameter) with large grained MAPbI3 films combining the perovskites excellent transport properties with the unique opto-electronic properties of quantum confined Si NCs. The electronic structures of MAPbI3 and Si NCs, ideally aligned to form a type-I heterojunction, demonstrated improved carrier collection through a higher short-circuit current density (~ 20 mA cm−2) measured in photovoltaic test devices. The addition of p- and n-doped Si NCs within the MAPbI3 films also showed unexpected and interesting device performance improvements, where the typical perovskite degradation process in ambient conditions was considerably slowed down and the overall device efficiency was observed to increase under light soaking. We attribute these improvements to the presence of Si NCs, which helped maintain the perovskite film qualities for more than 14 days in open atmosphere.
ORCID iDs
Rocks, Conor, Svrcek, Vladimir, Velusamy, Tamilselvan, Macias-Montero, Manuel, Maguire, Paul and Mariotti, Davide ORCID: https://orcid.org/0000-0003-1504-4383;-
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Item type: Article ID code: 90195 Dates: DateEvent31 August 2018Published26 May 2018Published Online16 May 2018AcceptedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering > Production of electric energy or power Department: Faculty of Engineering > Design, Manufacture and Engineering Management Depositing user: Pure Administrator Date deposited: 12 Aug 2024 10:03 Last modified: 03 Oct 2024 10:34 URI: https://strathprints.strath.ac.uk/id/eprint/90195