Significant carrier extraction enhancement at the interface of an inN/P-GaN heterojunction under reverse bias voltage
Svrcek, Vladimir and Kolenda, Marek and Kadys, Arunas and Reklaitis, Ignas and Dobrovolskas, Darius and Malinauskas, Tadas and Lozach, Mickael and Mariotti, Davide and Strassburg, Martin and Tomašiūnas, Roland (2018) Significant carrier extraction enhancement at the interface of an inN/P-GaN heterojunction under reverse bias voltage. Nanomaterials, 8 (12). 1039. ISSN 2079-4991 (https://doi.org/10.3390/NANO8121039)
Preview |
Text.
Filename: Svrcek-etal-Nanomaterials-2018-Significant-carrier-extraction-enhancement-at-the-interface.pdf
Final Published Version License: Download (1MB)| Preview |
Abstract
In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.
ORCID iDs
Svrcek, Vladimir, Kolenda, Marek, Kadys, Arunas, Reklaitis, Ignas, Dobrovolskas, Darius, Malinauskas, Tadas, Lozach, Mickael, Mariotti, Davide ORCID: https://orcid.org/0000-0003-1504-4383, Strassburg, Martin and Tomašiūnas, Roland;-
-
Item type: Article ID code: 90168 Dates: DateEvent12 December 2018Published10 December 2018AcceptedSubjects: Science > Physics > Solid state physics. Nanoscience Department: Faculty of Engineering > Design, Manufacture and Engineering Management Depositing user: Pure Administrator Date deposited: 07 Aug 2024 11:41 Last modified: 22 Sep 2024 01:26 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/90168