Review of semiconductor devices and other power electronics components at cryogenic temperature
Liao, Yuchuan and Elwakeel, Abdelrahman and Xiao, Yudi and Alzola, Rafael Peña and Zhang, Min and Yuan, Weijia and Feliciano, Alfonso J. Cruz and Graber, Lukas (2024) Review of semiconductor devices and other power electronics components at cryogenic temperature. iEnergy, 3 (2). pp. 95-107. ISSN 2771-9197 (https://doi.org/10.23919/ien.2024.0014)
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Abstract
With the increasing demand for high power density, and to meet extreme working conditions, research has been focused on investigating the performance of power electronics devices at cryogenic temperatures. The aim of this paper is to review the performance of power semiconductor devices, passive components, gate drivers, sensors, and eventually power electronics converters at cryogenic temperatures. By comparing the physical properties of semiconductor materials and the electrical performance of commercial power semiconductor devices, silicon carbide switches show obvious disadvantages due to the increased on-resistance and switching time at cryogenic temperature. In contrast, silicon and gallium nitride devices exhibit improved performance when temperature is decreased. The performance ceiling of power semiconductor devices can be influenced by gate drivers, within which the commercial alternatives show deteriorated performance at cryogenic temperature compared to room temperature. Moreover, options for voltage and current sense in cryogenic environments are justified. Based on the cryogenic performance of the various components afore-discussed, this paper ends by presenting an overview of the published converter, which are either partially or fully tested in a cryogenic environment.
ORCID iDs
Liao, Yuchuan, Elwakeel, Abdelrahman, Xiao, Yudi ORCID: https://orcid.org/0000-0001-5451-8014, Alzola, Rafael Peña, Zhang, Min ORCID: https://orcid.org/0000-0003-4296-7730, Yuan, Weijia ORCID: https://orcid.org/0000-0002-7953-4704, Feliciano, Alfonso J. Cruz and Graber, Lukas;-
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Item type: Article ID code: 89972 Dates: DateEvent30 June 2024Published20 June 2024Accepted3 June 2024SubmittedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering
Faculty of EngineeringDepositing user: Pure Administrator Date deposited: 22 Jul 2024 09:26 Last modified: 05 Oct 2024 00:42 URI: https://strathprints.strath.ac.uk/id/eprint/89972