Titanium sapphire : A decade of diode-laser pumping

Coyle, Jamie C.E. and Hopkins, John-Mark and Lagatsky, Alexander A. and Kemp, Alan J.; (2019) Titanium sapphire : A decade of diode-laser pumping. In: 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 . IEEE, DEU. ISBN 9781728104690

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    Abstract

    For many years, Ti:sapphire was the prototypical example of a solid-state laser material that could not be diode pumped. The rationale for this assessment follows from the laser properties of Ti:sapphire, which combine to demand high brightness pumping in the blue-green region (see fig. 1 [1]). The development of efficient Gallium Nitride (GaN) based laser diodes eroded this logic [2], and improvements in the spatial brightness of GaN diode lasers subsequently enabled the first demonstration of a directly diode-laser pumped Ti:sapphire laser in 2009 [3], This presentation will outline the physics that makes diode-pumping difficult, and the developments that mean, it is, nonetheless, possible. Interestingly, diode-pumping of CW and modelocked Ti:sapphire lasers was achieved not by a radical redesign of the laser, but by careful optimisation of existing approaches that enabled the rapidly improving brightness of GaN diode lasers to be exploited [3-5].