Evaluation of the off-state base-emitter voltage requirement of the SiC BJT with a regenerative proportional base driver circuit and their application in an inverter
McNeill, Neville and Jin, Bosen and Yuan, Xibo and Laird, Ian (2020) Evaluation of the off-state base-emitter voltage requirement of the SiC BJT with a regenerative proportional base driver circuit and their application in an inverter. IEEE Transactions on Industrial Electronics, 67 (9). pp. 7179-7189. ISSN 0278-0046 (https://doi.org/10.1109/TIE.2019.2938492)
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Abstract
A strong candidate device for use in high-efficiency and high-density power converters is the SiC bipolar junction transistor, which requires a continuous gate (base) current to maintain its on-state. A base driver circuit with regenerative collector current feedback using a current transformer, and a negative off-state base-emitter voltage is presented in this article. The off-state base-emitter voltage required to prevent simultaneous conduction of a commercially available device when subjected to dv/dt's is assessed. The device is then utilized in a three-phase dc-To-Ac power converter where the efficacy of using the proposed base driver is evaluated. The off-state base-emitter voltage used is informed by the dv/dt tests. The converter is supplied from a 600-V dc rail, switches at 50 kHz and supplies a 4.1-kW load at a modulation index of 0.9. An efficiency of 97.4% was measured.
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Item type: Article ID code: 69914 Dates: DateEvent30 September 2020Published26 September 2019Published Online27 August 2019AcceptedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Pure Administrator Date deposited: 24 Sep 2019 09:18 Last modified: 16 Oct 2024 00:34 URI: https://strathprints.strath.ac.uk/id/eprint/69914