Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers

Zhang, Jingyuan Linda and Lagoudakis, Konstantinos G. and Tzeng, Yan-Kai and Dory, Constantin and Radulaski, Marina and Kelaita, Yousif and Fischer, Kevin A. and Sun, Shuo and Shen, Zhi-Xun and Melosh, Nicholas A. and Chu, Steven and Vučković, Jelena (2017) Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers. Optica, 4 (11). pp. 1317-1321. ISSN 1899-7015

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    Abstract

    Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the optical transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. This work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.