Transfer printing of semiconductor nanowires with lasing emission for controllable nanophotonic device fabrication
Guilhabert, Benoit and Hurtado, Antonio and Jevtics, Dimitars and Gao, Qiang and Tan, Hark Hoe and Jagadish, Chennupati and Dawson, Martin D. (2016) Transfer printing of semiconductor nanowires with lasing emission for controllable nanophotonic device fabrication. ACS Nano, 10 (4). 3951–3958. ISSN 1936-0851
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Abstract
Accurate positioning and organization of Indium Phosphide (InP) Nanowires (NW) with lasing emission at room temperature is achieved using a nanoscale Transfer Printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g. polymers, silica and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.
Creators(s): |
Guilhabert, Benoit ![]() ![]() ![]() ![]() | Item type: | Article |
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ID code: | 55895 |
Notes: | This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Nano, copyright © American Chemical Society after peer review. To access the final edited and published work see DOI: 10.1021/acsnano.5b07752 |
Keywords: | nanowires, transfer printing, nanophotonics, nanowire lasers, nanolasers, hybrid integration approach, Solid state physics. Nanoscience, Industrial and Manufacturing Engineering |
Subjects: | Science > Physics > Solid state physics. Nanoscience |
Department: | Faculty of Science > Physics > Institute of Photonics Faculty of Science > Physics |
Depositing user: | Pure Administrator |
Date deposited: | 15 Mar 2016 12:24 |
Last modified: | 16 Jan 2021 01:29 |
URI: | https://strathprints.strath.ac.uk/id/eprint/55895 |
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