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Open Access research which pushes advances in bionanotechnology

Strathprints makes available scholarly Open Access content by researchers in the Strathclyde Institute of Pharmacy & Biomedical Sciences (SIPBS) , based within the Faculty of Science.

SIPBS is a major research centre in Scotland focusing on 'new medicines', 'better medicines' and 'better use of medicines'. This includes the exploration of nanoparticles and nanomedicines within the wider research agenda of bionanotechnology, in which the tools of nanotechnology are applied to solve biological problems. At SIPBS multidisciplinary approaches are also pursued to improve bioscience understanding of novel therapeutic targets with the aim of developing therapeutic interventions and the investigation, development and manufacture of drug substances and products.

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Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide

Goel, Saurav and Luo, Xichun and Stukowski, Alexander and Reuben, Robert L. (2012) Influence of nanoparticle coolant and crystal structure of the workpiece during nanometric cutting of silicon carbide. In: 12th euspen International Conference, 2012-06-04 - 2012-06-08.

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Abstract

Silicon carbide (SiC) is a suitable candidate for MEMS, NEMS, optoelectronic andnanotribological applications e.g. airborne laser devices, laser radar systems, vacuumultraviolet (VUV) telescopes and space based laser mirrors. In-depth understanding of the influence of coolant and crystal structure of the work material on the nanometric cutting process of SiC could help in cost saving operations. Therefore, nanoscratching trials were carried out on single crystal 6H-SiC involving four pre-selected coolants to emulate nanometric cutting. A specific coolant was found to improve the cutting conditions tremendously and hence recommended. Moreover, a molecular dynamics (MD) simulation model was developed to simulate nanometric cutting of polycrystalline (PC) 3C-SiC and single crystal (SC) 3C-SiC. Besides explaining the reasons for the ease of machinability of chemically vapour deposited (CVD) 3C-SiC compared to SC-3C-SiC, simulation results also explains why SC-SiC provides a better measure of attainable surface roughness in comparison to CVD-SiC and reaction bonded (RB)-SiC.