Single point diamond turning of single crystal silicon carbide : molecular dynamic simulation study
Goel, S. and Luo, X. and Reuben, R.L. and Rashid, W.B. and Sun, J.; (2011) Single point diamond turning of single crystal silicon carbide : molecular dynamic simulation study. In: Key Engineering Materials. Trans Tech Publications Ltd, Durnten-Zurich, Switzerland, pp. 150-155. ISBN 9783037852972
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Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.
Creators(s): |
Goel, S., Luo, X. ![]() | Item type: | Book Section |
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ID code: | 45142 |
Keywords: | β-Silicon Carbide (Cubic), molecular dynamical simulations, single point diamond turning, Manufactures, Industrial and Manufacturing Engineering |
Subjects: | Technology > Manufactures |
Department: | Faculty of Engineering > Design, Manufacture and Engineering Management |
Depositing user: | Pure Administrator |
Date deposited: | 14 Oct 2013 15:45 |
Last modified: | 20 Jan 2021 15:32 |
Related URLs: | |
URI: | https://strathprints.strath.ac.uk/id/eprint/45142 |
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