Single point diamond turning of single crystal silicon carbide : molecular dynamic simulation study

Goel, S. and Luo, X. and Reuben, R.L. and Rashid, W.B. and Sun, J. (2011) Single point diamond turning of single crystal silicon carbide : molecular dynamic simulation study. In: Key Engineering Materials. Trans Tech Publications Ltd, Durnten-Zurich, Switzerland, pp. 150-155. ISBN 9783037852972

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Abstract

Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

Author(s):Goel, S., Luo, X., Reuben, R.L., Rashid, W.B. and Sun, J.
Item type:Book Section
ID code:45142
Keywords:β-Silicon Carbide (Cubic), molecular dynamical simulations, single point diamond turning, Manufactures, Industrial and Manufacturing Engineering
Subjects:Technology > Manufactures
Department:Faculty of Engineering > Design, Manufacture and Engineering Management
Depositing user: Pure Administrator
Date deposited:14 Oct 2013 15:45
Last modified:29 Mar 2019 03:22
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URI:https://strathprints.strath.ac.uk/id/eprint/45142
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