GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

Vysniauskas, G. and Hetterich, M. and Macaluso, R. and Burns, D. and Dawson, M.D. and Bente, E.A.J.M. and Egorov, A.Y. and Riechert, H. (2001) GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser. In: Conference on Lasers and Electro-Optics, 2001. CLEO '01, 2001-05-06 - 2001-05-11. (https://doi.org/10.1109/CLEO.2001.947787)

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Abstract

In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.

ORCID iDs

Vysniauskas, G., Hetterich, M., Macaluso, R., Burns, D., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Bente, E.A.J.M., Egorov, A.Y. and Riechert, H.;
  • Item type:Conference or Workshop Item(Paper)
    ID code:38367
    Dates:
    Date
    Event
    May 2001
    Published
    Keywords:diode lasers, vertical cavity surface emitting lasers, semiconductor materials, semiconductor lasers, optical materials, optical fibers , mirrors, laser modes , gallium arsenide, fiber lasers , modelocking, laser, structure, GaInNAs VCSEL , Physics
    Subjects:Science > Physics
    Department:Faculty of Science > Physics > Institute of Photonics
    Depositing user: Pure Administrator
    Date deposited:09 Mar 2012 15:18
    Last modified:19 May 2023 00:50
    URI:https://strathprints.strath.ac.uk/id/eprint/38367
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