State selection of a bistable SOA ring laser for bit level optical memory applications

Wang, Bing C. and Xu, Lei and Baby, Varghese and Glesk, Ivan (2002) State selection of a bistable SOA ring laser for bit level optical memory applications. IEEE Photonics Technology Letters, 14 (7). pp. 989-991. ISSN 1041-1135 (https://doi.org/10.1109/LPT.2002.1012408)

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Abstract

In this letter, we demonstrate the selection between two bistable states of a semiconductor fiber ring laser, using bits from a timeslot channel switched out using a terahertz optical asymmetric demultiplexer. By changing the selected timeslot channel, we were able to change the semiconductor fiber ring laser from a state with a two-peak output at 1570.6 and 1579 nm to a state with one-peak output at 1570.6 nm. This structure has potential application to optical memories.

ORCID iDs

Wang, Bing C., Xu, Lei, Baby, Varghese and Glesk, Ivan ORCID logoORCID: https://orcid.org/0000-0002-3176-8069;
  • Item type:Article
    ID code:37225
    Dates:
    Date
    Event
    1 July 2002
    Published
    Keywords:fibre lasers , optical bistability, optical storage, optical switches, ring lasers , semiconductor optical amplifiers, Electrical engineering. Electronics Nuclear engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
    Subjects:Technology > Electrical engineering. Electronics Nuclear engineering
    Department:Faculty of Engineering > Electronic and Electrical Engineering
    Depositing user: Pure Administrator
    Date deposited:31 Jan 2012 13:29
    Last modified:28 Sep 2022 01:22
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/37225
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