A theoretical study of erbium in GaN

Hourahine, B. and Sanna, S. and Aradi, B. and Kohler, C. and Frauenheim, Th. (2006) A theoretical study of erbium in GaN. Physica B: Condensed Matter, 376-377. pp. 512-515. ISSN 0921-4526 (https://doi.org/10.1016/j.physb.2005.12.130)

Full text not available in this repository.Request a copy

Abstract

Electroluminescence from rare earth-doped nitride semiconductors shows promise for a variety of applications since strong room temperature luminescence can be observed in these materials for a variety of lanthanide dopants. Modelling of the microscopic structure and properties of the defects involved in the luminescence presents a substantial challenge to current theoretical methods. While it is possible to investigate issues of defect stability using pseudopotential-based approaches, which avoid the problems of modelling strongly correlated f-electron systems, this cannot address luminescence from these centres. Explicitly treating 4f electrons is beyond the reach of the usual mean-field methods normally employed in density-functional theory. In an attempt to improve the theoretical description of these systems while extending the size of models used, we present the results using density-functional -based tight-binding calculations on the properties of erbium in wurtzite GaN. Both substitutional defects and complexes with nitrogen vacancies are considered. We account for strong correlation of the 4f shell using a variant of the LDA+ U method. (c) 2005 Elsevier B.V. All rights reserved.

  • Item type:Article
    ID code:31164
    Dates:
    Date
    Event
    1 April 2006
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:01 Jul 2011 13:11
    Last modified:08 Apr 2024 19:06
    URI:https://strathprints.strath.ac.uk/id/eprint/31164
CORE (COnnecting REpositories)