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World class computing and information science research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by researchers from the Department of Computer & Information Sciences involved in mathematically structured programming, similarity and metric search, computer security, software systems, combinatronics and digital health.

The Department also includes the iSchool Research Group, which performs leading research into socio-technical phenomena and topics such as information retrieval and information seeking behaviour.

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Number of items: 5.

Novikov, S.V. and Yu, K.M. and Levander, A. and Detert, D. and Sarney, W.L. and Liliental-Weber, Z. and Shaw, M. and Martin, R.W. and Svensson, S.P. and Walukiewicz, W. and Foxon, C.T. (2013) Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (3). ISSN 1071-1023

Samarelli, A and MacIntyre, D.S. and Strain, MJ and De La Rue, RM and Sorel, M. and Thoms, S (2008) Optical characterization of a hydrogen silsesquioxane lithography process. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (6).

Sheridan, A.K. and Clark, A.W. and Glidle, A. and Cooper, J.M. and Cumming, D.R.S. (2007) Fabrication and tuning of nanoscale metallic ring and split-ring arrays. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25 (6). pp. 2628-2631. ISSN 1071-1023

Choi, H.W. and Gu, E. and Liu, C. and Griffin, C. and Girkin, J.M. and Watson, I.M. and Dawson, M.D. (2005) Fabrication of natural diamond microlenses by plasma etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23 (1). pp. 130-132. ISSN 1071-1023

Choi, H.W. and Jeon, C.W. and Dawson, M.D. (2005) Tapered sidewall dry etching process for GaN and its applications in device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23 (1). pp. 99-102. ISSN 1071-1023

This list was generated on Tue Aug 22 06:07:42 2017 BST.