Browse by Author or Creator
Group by: Item type | No Grouping
Jump to: Article
Number of items: 5.
Trager-Cowan, C. and Naresh-Kumar, G. and Allehiani, N. and Kraeusel, S. and Hourahine, B. and Vespucci, S. and Thomson, D. and Bruckbauer, J. and Kusch, G. and Edwards, P. R. and Martin, R. W. and Mauder, C. and Day, A. P. and Winkelmann, A. and Vilalta-Clemente, A. and Wilkinson, A. J. and Parbrook, P. J. and Kappers, M. J. and Moram, M. A. and Oliver, R. A. and Humphreys, C. J. and Shields, P. and Le Boulbar, E. D. and Maneuski, D. and O'Shea, V. and Mingard, K. P. (2014) Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20 (S3). pp. 1024-1025. ISSN 1435-8115
Naresh-Kumar, G. and Bruckbauer, J. and Edwards, P. R. and Kraeusel, S. and Hourahine, B. and Martin, R. W. and Kappers, M. J. and Moram, M. A. and Lovelock, S. and Oliver, R. A. and Humphreys, C. J. and Trager-Cowan, C. (2014) Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN. Microscopy and Microanalysis, 20 (1). pp. 55-60. ISSN 1431-9276
Naresh Kumar, G. and Mauder, C and Wang, K.R. and Kraeusel, Simon and Bruckbauer, Jochen and Edwards, P. R. and Hourahine, Benjamin and Kalisch, H. and Vescan, A. and Giesen, C. and Heuken, M and Trampert, A. and Day, A.P. and Trager-Cowan, Carol (2013) Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope. Applied Physics Letters, 102 (14). ISSN 0003-6951
Rauch, Christian and Tuomisto, Filip and Vilalta-Clemente, Arantxa and Lacroix, Bertrand and Ruterana, Pierre and Kraeusel, Simon and Hourahine, Benjamin and Schaff, William J. (2012) Defect evolution and interplay in n-type InN. Applied Physics Letters, 100 (9). 091907. ISSN 0003-6951
Kraeusel, Simon and Hourahine, Benjamin (2012) Global search for stable screw dislocation cores in III-N semiconductors. Physica Status Solidi A, 209 (1). pp. 71-74. ISSN 1862-6300
This list was generated on Sun Nov 23 03:45:44 2014 GMT.