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Tian, Pengfei and McKendry, Jonathan and Gong, Zheng and Zhang, Shuailong and Watson, Scott and Zhu, Dandan and Watson, Ian and Gu, Erdan and Kelly, Anthony E and Humphreys, Colin J and Dawson, Martin (2014) Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. Journal of Applied Physics, 115 (3). ISSN 0021-8979

Lin, Jie and Llopis, Antonio and Krokhin, Alexi and Pereira, S. and Watson, Ian and Neogi, A. (2014) Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells. Applied Physics Letters, 104 (24). ISSN 0003-6951

Yang, Wei and Zhang, Shuailong and McKendry, Jonathan and Herrnsdorf, Johannes and Tian, Pengfei and Gong, Zheng and Ji, Qingbin and Watson, Ian and Gu, Erdan and Dawson, Martin and Feng, Liefeng and Wang, Cunda and Hu, Xiaodong (2014) Size-dependent capacitance study on InGaN-based micro-light-emitting diodes. Journal of Applied Physics, 116 (4). ISSN 0021-8979

Trindade, Antonio Jose Marques and Guilhabert, Benoit Jack Eloi and Massoubre, David and Zhu, Dandan and Laurand, Nicolas and Gu, Erdan and Watson, Ian and Humphreys, Colin J and Dawson, Martin (2013) Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates. Applied Physics Letters, 103 (25). ISSN 0003-6951

Massoubre, David and Xie, Enyuan and Guilhabert, Benoit Jack Eloi and Herrnsdorf, Johannes and Gu, Erdan and Watson, Ian and Dawson, Martin (2013) Micro-structured light emission from planar InGaN light-emitting diodes. Semiconductor Science and Technology, 29 (1). ISSN 0268-1242

Watson, Ian (2013) Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys : a key chemical technology for advanced device applications. Coordination Chemistry Reviews, 257 (13-14). pp. 2120-2141.

Watson, Ian (2013) Metal organic vapour phase epitaxy of AIN, GaN, InN and their alloys : a key chemical technology for advanced device applications. Coordination Chemistry Reviews, 257 (13-14). pp. 2120-2141. ISSN 0010-8545

Llopis, Antonio and Lin, J. and Pereira, Sergio Manuel De Sousa and Trindade, Tito and Martins, M.A. and Watson, Ian and Krokhin, Alexi and Neogi, Arup (2013) Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells. Physical Review B: Condensed Matter and Materials Physics, 87 (20). ISSN 1098-0121

Kachkanov, V. and Dolbyna, I. and O'Donnell, Kevin and Lorenz, K. and Pereira, S. and Watson, Ian and Sadler, Thomas and Li, H. and Zubialevich, Vitaly and Parbrook, Peter (2013) Characterisation of III-nitride materials by synchrotron X-ray micro-diffraction reciprocal space mapping. Physica Status Solidi C, 10 (3). pp. 481-485. ISSN 1862-6351

Kachkanov, V. and Dobnya, Igor and O'Donnell, Kevin and Lorenz, Katharina and Pereira, Sergio Manuel De Sousa and Watson, Ian and Sadler, Thomas and Li, Haoning and Zubialevich, Vitaly and Parbrook, Peter (2013) Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping. Physica Status Solidi C. ISSN 1862-6351 (In Press)

Watson, Ian (2013) Cleanrooms for advanced optoelectronic devices. Innovation into Success (UK Science Parks Association Magazine), 2013 (Autumn). pp. 85-86.

Guilhabert, Benoit Jack Eloi and Massoubre, David and Richardson, Elliot and McKendry, Jonathan and Valentine, Gareth and Henderson, Robert and Watson, Ian and Gu, Erdan and Dawson, Martin (2012) Sub-micron lithography using InGaN micro-LEDs : mask-free fabrication of LED arrays. IEEE Photonics Technology Letters, 24 (24). pp. 2221-2224. ISSN 1041-1135

Tian, Pengfei and McKendry, Jonathan and Gong, Zheng and Guilhabert, Benoit Jack Eloi and Watson, Ian and Gu, Erdan and Chen, Zhizhong and Zhang, Guoyi and Dawson, Martin (2012) Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes. Applied Physics Letters, 101 (23). ISSN 0003-6951

Vennegues, P. and Diaby, B. S. and Kim-Chauveau, H. and Bodiou, L. and Schenk, H. P. D. and Frayssinet, E. and Martin, R. W. and Watson, I. M. (2012) Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters. Journal of Crystal Growth, 353 (1). pp. 108-114. ISSN 0022-0248

Xie, E. Y. and Chen, Z. Z. and Edwards, P. R. and Gong, Z. and Liu, N. Y. and Tao, Y. B. and Zhang, Y. F. and Chen, Y. J. and Watson, I. M. and Gu, E. and Martin, R. W. and Zhang, G. Y. and Dawson, M. D. (2012) Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging. Journal of Applied Physics, 112 (1).

Mahat, Meg and Llopis, Antonio and Schaller, Richard and Watson, Ian and Pereira, Sergio Manuel De Sousa and Neogi, Arup (2012) Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits. MRS Communications, 2 (2). pp. 55-60.

Magalhaes, S. and Barradas, N. P. and Alves, E. and Watson, Ian and Lorenz, K. (2012) High precision determination of the InN content of AI1-XIn N thin films by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. pp. 105-108. ISSN 0168-583X

Kachkanov, V. and Dolbnya, I. P. and O'Donnell, K. P. and Lorenz, K. and Pereira, S. and Martin, R. W. and Edwards, P. R. and Watson, I. M. (2012) Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping. MRS Online Proceedings Library, 1396.

Gong, Zheng and Liu, N.Y. and Tao, Y.B. and Massoubre, David and Xie, E.Y and Hu, X.D. and Chen, Z.Z. and Zhang, G.Y. and Pan, Y.B. and Hao, M.S. and Watson, Ian and Gu, Erdan and Dawson, Martin (2012) Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes. Semiconductor Science and Technology, 27 (1). ISSN 0268-1242

Magalhaes, S. and Barradas, N. P. and Alves, E. and Watson, I. M. and Lorenz, K. (2012) High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. pp. 105-108. ISSN 0168-583X

Yanfeng, Zhang and McKnight, Loyd James and Engin, Erman and Watson, Ian and Cryan, Martin J. and Gu, Erdan and Thompson, Mark G. and Calvez, Stephane and O’Brien, Jeremy L. and Dawson, Martin (2011) GaN directional couplers for integrated quantum photonics. Applied Physics Letters, 99 (16). p. 161119. ISSN 0003-6951

Gryczynski, K.G. and Vemuri, P.R. and Watson, Ian and Neogi, Arup (2011) Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. Applied Physics Letters, 99 (12). ISSN 0003-6951

Khokhar, Ali Z. and Parsons, Keith and Hubbard, Graham and Watson, Ian M. and Rahman, Faiz and MacIntyre, Douglas S and Xiong, Chang and Massoubre, David and Gong, Zheng and Gu, Erdan and Johnson, Nigel P. and De La Rue, Richard M. and Dawson, Martin D. and Abbott, Steve J. and Charlton, Martin D.B. and Tillin, Martin (2011) Emission characteristics of photonic crystal light-emitting diodes. Applied Optics, 50 (19). pp. 3233-3239. ISSN 1559-128X

Gong, Z. and Zhang, Y.F. and Kelm, P. and Watson, I.M. and Gu, E. and Dawson, M.D. (2011) InGaN micro-pixellated light-emitting diodes with nano-textured surfaces and modified emission profiles. Applied Physics A: Materials Science and Processing, 103 (2). pp. 389-393. ISSN 0947-8396

Chen, Yujie and Herrnsdorf, Johannes and Guilhabert, Benoit Jack Eloi and Zhang, Yanfeng and Watson, Ian M. and Gu, Erdan and Laurand, Nicolas and Dawson, Martin D. (2011) Colloidal quantum dot random laser. Optics Express, 19 (4). pp. 2996-3003. ISSN 1094-4087

Khokhar, A.Z and Parsons, K. and Hubbard, G. and Rahman, F. and MacIntyre, D.S. and Xiong, C. and Massoubre, D. and Gong, Z. and Johnson, N.P. and De La Rue, R.M. and Watson, I.M. and Gu, E. and Dawson, M.D. and Abbott, S.J. and Charlton, M.D.B and Tillin, M. (2010) Nanofabrication of gallium nitride photonic crystal light-emitting diodes. Microelectronic Engineering, 87 (11). pp. 2200-2207. ISSN 0167-9317

Lorenz, K. and Magalhaes, S. and Franco, N. and Barradas, N. P. and Darakchieva, V. and Alves, E. and Pereira, S. and Correia, M. R. and Munnik, F. and Martin, R. W. and O'Donnell, K. P. and Watson, I. M. (2010) Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties. Physica Status Solidi B, 247 (7). pp. 1740-1746. ISSN 0370-1972

Tillin, M. and Charlton, M.D.B. and Gong, Z. and Khokhar, A.Z. and Massoubre, D. and Watson, I.M. and Gu, E. and Dawson, M.D. and Rahman, F. and Johnson, N.P. and Macintyre, D. and De La Rue, R.M. and Parsons, K. and Lin, S. (2010) Photonic quasi-crystal light emitting diodes: comparisons of device performance with pattern pitch. Proceedings of SPIE the International Society for Optical Engineering, 7713. 77130B-1. ISSN 0277-786X

Xiong, C. and Edwards, P.R. and Christmann, G. and Gu, E. and Dawson, Martin and Baumberg, J.J. and Martin, R.W. and Watson, I.M. (2010) High reflectivity GaN/Air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AllnN layers. Semiconductor Science and Technology, 25 (3). 032001-032006. ISSN 0268-1242

Gong, Z. and Jin, S. and Chen, Y. and McKendry, J.J.D. and Massoubre, D. and Watson, I.M. and Gu, E. and Dawson, M.D. (2010) Size-dependent light output, spectral shift, and self-heating of 400nm InGaN light-emitting diodes. Journal of Applied Physics, 107 (1). 013103. ISSN 0021-8979

Xiong, C. and Rizzi, F. and Bejtka, K. and Edwards, P. R. and Gu, E. and Dawson, M. D. and Martin, R. W. and Watson, I. M. (2010) Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off. Superlattices and Microstructures, 47 (1). pp. 129-133. ISSN 0749-6036

Girao, A.Z. and Martins, M.A. and Pereira, S. and Trindade, T. and Zhachuk, R. and Kazan, M. and Watson, I.M. (2010) Noble metal nanocrystals at the surface of nitride semiconductors: synthesis, deposition and surface characterisation. Journal of Nanoscience and Nanotechnology, 10. pp. 2574-2577. ISSN 1533-4880

Roqan, I.S. and O'Donnell, K.P. and Martin, R.W. and Trager-Cowan, C. and Matias, V. and Vantomme, A. and Lorenz, K. and Alves, E. and Watson, I.M. (2009) Optical and structural properties of Eu-implanted InxAl1−xN. Journal of Applied Physics, 106 (8). 083508-1-083508-4. ISSN 0021-8979

Wang, K. and O'Donnell, K.P. and Hourahine, B. and Martin, R.W. and Watson, I.M. and Lorenz, K. and Alves, E. (2009) Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range. Physical Review B, 80 (12). ISSN 1098-0121

Xiong, C. and Massoubre, D. and Gu, E. and Dawson, M.D. and Watson, I.M. (2009) Fabrication and characterisation of microscale air bridges in conductive gallium nitride. Applied Physics A: Materials Science and Processing, 96 (2). pp. 495-501. ISSN 0947-8396

Rahman, F. and Xu, S. and Watson, I.M. and Mutha, D.K.B. and Oxland, R.K. and Johnson, N.P. and Bannerjee, A. and Wasige, E. (2009) Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors. Applied Physics A: Materials Science and Processing, 94 (3). pp. 633-639. ISSN 0947-8396

Redondo-Cubero, A. and Lorenz, K. and Gago, R. and Franco, N. and Fernandez-Garrido, S. and Smulders, P.J.M. and Munoz, E. and Watson, I.M. and , EU-FP6 (Funder) and , FCT, Portugal (Funder) and , MICINN, Spain (Funder) (2009) Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures. Applied Physics Letters, 95 (5). ISSN 0003-6951

Itskos, G. and Belton, C. and Heliotis, G. and Watson, I.M. and Dawson, M.D. and Murray, R. and Bradley, D.D.C. (2009) White light emission via cascade Förster energy transfer in (Ga, In)N quantum well/polymer blend hybrid structures. Nanotechnology, 20 (27).

Othonos, A. and Itskos, G. and Bradley, D.D.C. and Dawson, M.D. and Watson, I.M. (2009) Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells. Applied Physics Letters, 94 (20). 203102-1-203102-3. ISSN 0003-6951

Massoubre, D. and Watson, I.M. and McKendry, J. and Guilhabert, B.J.E. and Gong, Z. and Gu, E. and Dawson, M.D. (2009) Fabrication of planar GaN-based micro-pixel light emitting diode arrays. IEEE Lasers and Electro-Optics Society Annual Meeting. p. 84. ISSN 1092-8081 (Unpublished)

Cusco, R. and Pastor, D. and Hernandez, S. and Artus, L. and Martinez, O. and Jimenez, J. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2008) Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers. Semiconductor Science and Technology, 23 (10). 105002-1-105002-4. ISSN 0268-1242

Lorenz, K. and Franco, N. and Alves, E. and Pereira, S. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2008) Relaxation of compressively strained AlInN on GaN. Journal of Crystal Growth, 310 (18). pp. 4058-4064. ISSN 0022-0248

Watson, I.M. and Xiong, C. and Gu, E. and Dawson, M.D. and Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. (2008) Selective wet etching of AlInN layers for nitride-based MEMS and photonic device structures. Proceedings of SPIE the International Society for Optical Engineering, 6993. ISSN 0277-786X

Yakovlev, E.V. and Lobanova, A.V. and Talalaev, R.A. and Watson, I.M. and Lorenz, K. and Alves, E. (2008) Mechanisms of AllnN growth by MOVPE: modeling and experimental study. Physica Status Solidi C, 5 (6). pp. 1688-1690. ISSN 1862-6351

Wang, T. and Lee, K.B. and Bai, J. and Parbrook, P.J. and Ranalli, G. and Wang, Q. and Airey, R. and Cullis, A.G. and Zhang, H.X. and Massoubre, D. and Gong, Z. and Watson, I.M. and Gu, E. and Dawson, M.D. (2008) The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. Journal of Physics D: Applied Physics, 41 (9). 094003. ISSN 0022-3727

Belton, C.R. and Itskos, G. and Heliotis, G. and Stavrinou, P.N. and Lagoudakis, P.G. and Lupton, J. and Pereira, S. and Gu, E. and Griffin, C. and Guilhabert, B.J.E. and Watson, I.M. and Mackintosh, A.R. and Pethrick, R.A. and Feldmann, J. and Murray, R. and Dawson, M.D. and Bradley, D.D.C. (2008) New light from hybrid inorganic-organic emitters. Journal of Physics D: Applied Physics, 41 (9). 094006. ISSN 0022-3727

Wang, K. and Martin, R. W. and Amabile, D. and Edwards, P. R. and Hernandez, S. and Nogales, E. and O'Donnell, K. P. and Lorenz, K. and Alves, E. and Matias, V. and Vantomme, A. and Wolverson, D. and Watson, I. M. (2008) Optical energies of AllnN epilayers. Journal of Applied Physics, 103 (7). ISSN 0021-8979

Barradas, N.P. and Alves, E. and Pereira, S. and Watson, I.M. (2008) RBS analysis of InaGaN/GaN quantum wells for hybrid structures with efficient Forster coupling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 288 (8). pp. 1402-1406. ISSN 0168-583X

Pereira, Sergio Manuel de Sousa and Martins, Manuel Antonio and Trindade, Tito and Watson, Ian M. and Zhu, Diane and Humphreys, Colin J. (2008) Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures. Advanced Materials, 20 (5). pp. 1038-1043. ISSN 1521-4095

Coquillat, D. and Le Vassor D'Yerville, M. and Kazan, M. and Liu, C. and Watson, I.M. and Edwards, P.R. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2008) Studies of the photonic and optical-frequency phonon properties of selectively grown GaN micro-pyramids. Journal of Applied Physics, 103 (4). 004910-004910. ISSN 0021-8979

Lorenz, K. and Alves, E. and Roqan, I.S. and Martin, R.W. and Trager-Cowan, C. and O'Donnell, K.P. and Watson, I.M. (2008) Rare earth doping of III-nitride alloys by ion implantation. Physica Status Solidi A, 205 (1). pp. 34-37. ISSN 1862-6300

Tan, L.-T. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. and Wu, Z.H. and Ponce, F.A. (2008) Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates. Applied Physics Letters, 92 (3). ISSN 0003-6951

Roqan, I.S. and O'Donnell, K.P. and Trager-Cowan, C. and Hourahine, B. and Martin, R.W. and Lorenz, K. and Alves, E. and As, D.J. and Panfilova, M. and Watson, I.M. (2008) Luminescence spectroscopy of Eu-implanted zincblende GaN. Physica Status Solidi B, 245 (1). pp. 170-173. ISSN 0370-1972

Itskos, G. and Heliotis, G. and Lagoudakis, P.G. and Lupton, J. and Barradas, N.P. and Alves, E. and Pereira, S.M.D.S. and Watson, I.M. and Dawson, M.D. and Feldmann, J. and Murray, R. and Bradley, D.D.C. (2007) Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures. Physical Review B, 76 (3). 035344. ISSN 1098-0121

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer. Superlattices and Microstructures, 41 (5-6). p. 414. ISSN 0749-6036

Itskos, G. and Heliotis, G. and Belton, C. and Watson, I.M. and Dawson, M.D. and Bradley, D.D.C. and Murray, R. (2007) Efficient Forster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures. American Institute of Physics Conference Proceedings, 893 (1). pp. 355-356. ISSN 0094-243X

Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Kang, X.N. and Zhang, G.Y. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer. Applied Physics Letters, 90 (11). 111112-1-111112-3. ISSN 0003-6951

Rizzi, F. and Bejtka, K. and Edwards, P.R. and Martin, R.W. and Watson, I.M. (2007) Selective wet etching of lattice-matched AlInN-GaN heterostructures. Journal of Crystal Growth, 300 (1). pp. 254-258. ISSN 0022-0248

Trager-Cowan, C. and Sweeney, F. and Trimby, P. W. and Day, A. P. and Gholinia, A. and Schmidt, N. -H. and Parbrook, P. J. and Wilkinson, A. J. and Watson, I. M. (2007) Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films. Physical Review B, 75 (8). -. ISSN 1098-0121

Rizzi, F. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Dry etching of n-face GaN using two high-density plasma etch techniques. Physica Status Solidi C, 4 (1). pp. 200-2003. ISSN 1862-6351

Coquillat, D. and Le Vassor D'Yerville, M. and Boubang, T.S.A. and Liu, C. and Bejtka, K. and Watson, I.M. and Edwards, P.R. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2007) Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids. Physica Status Solidi C, 4. pp. 95-99. ISSN 1862-6351

Liu, C. and Watson, I.M. (2007) Quantitive simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire. Semiconductor Science and Technology, 22. pp. 629-635. ISSN 0268-1242

Rizzi, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. and Kang, X.N. and Zhang, G.Y. (2007) Thinning of N-face GaN (000-1) samples by inductively coupled plasma etching and chemomechanical polishing. Journal of Vacuum Science and Technology A, 25 (2). pp. 252-260. ISSN 0734-2101

Roqan, I. S. and Lorenz, K. and O'Donnell, K. P. and Trager-Cowan, C. and Martin, R. W. and Watson, I. M. and Alves, E. (2006) Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN. Superlattices and Microstructures, 40 (4-6). pp. 445-451. ISSN 0749-6036

Bejtka, K. and Martin, R.W. and Watson, I.M. and Ndiaye, S. and Leroux, M. (2006) Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer. Applied Physics Letters, 89 (191912). pp. 191912-1. ISSN 0003-6951

Trager-Cowan, C. and Sweeney, F. and Winkelmann, A. and Wilkinson, A.J. and Trimby, P.W. and Day, A.P. and Gholinia, A. and Schmidt, N.H. and Parbrook, P.J. and Watson, I.M. (2006) Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging. Materials Science and Technology, 22 (11). 1352-1358(7). ISSN 0267-0836

Tan, L.T. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2006) Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness. Applied Physics Letters, 89 (10). p. 101910. ISSN 0003-6951

Lee, J.K. and Cho, H. and Kim, B.H. and Park, S.H. and Gu, E. and Watson, I.M. and Dawson, M.D. (2006) InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers. New Physics: Korean Physical Society, 49 (1). pp. 407-411. ISSN 0374-4914

Lorenz, K. and Franco, N. and Alves, E. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2006) Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state. Physical Review Letters, 97. 085501. ISSN 0031-9007

Wang, K. and Martin, R.W. and Nogales, E. and Edwards, P.R. and O'Donnell, K.P. and Lorenz, K. and Alves, E. and Watson, I.M. (2006) Cathodoluminescence of rare earth implanted AlInN. Applied Physics Letters, 89 (13). -. ISSN 0003-6951

Heliotis, G. and Itskos, G. and Murray, R. and Dawson, M.D. and Watson, I.M. and Bradley, D.D.C. (2006) Hybrid inorganic/organic semiconductor heterostructures with efficient non-radiative energy transfer. Advanced Materials, 18 (3). pp. 334-338. ISSN 1521-4095

Park, S. and Liu, C. and Gu, E. and Dawson, M.D. and Watson, I.M. and Bejtka, K. and Edwards, P.R. and Martin, R.W. (2006) Membrane structures containing InGaN/GaN quantum wells, fabricated by wet etching of sacrificial silicon substrates. Physica Status Solidi C, 3 (6). pp. 1949-1952. ISSN 1862-6351

Gu, E. and Howard, H. and Conneely, A. and O'Connor, G.M. and Illy, E.K. and Knowles, M.R.H. and Edwards, P.R. and Martin, R.W. and Watson, I.M. and Dawson, M.D. (2006) Microfabrication in free-standing gallium nitride using UV laser micromachining. Applied Surface Science, 252 (13). pp. 4897-4901. ISSN 0169-4332

Yakovlev, E.V. and Talalaev, R.A. and Martin, R.W. and Peng, N. and Jeynes, C. and Deatcher, C.J. and Watson, I.M. (2006) Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor. Physica Status Solidi C, 3 (6). pp. 1620-1623. ISSN 1862-6351

Jarjour, A.F. and Green, A.M. and Parker, T.J. and Taylor, R.A. and Oliver, R.A. and Briggs, G.A.D. and Kappers, M.J. and Humphreys, C.J. and Martin, R.W. and Watson, I.M. (2006) Two-photon absorption from single InGaN/GaN quantum dots. Physica E: Low-dimensional Systems and Nanostructures, 32 (1-2). pp. 119-122.

Rizzi, F. and Edwards, P.R. and Watson, I.M. and Martin, R.W. (2006) Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AllnN on an n-face GaN surface. Superlattices and Microstructures, 40 (4-6). pp. 369-372. ISSN 0749-6036

Jarjour, A.F. and Taylor, R.A. and Martin, R.W. and Watson, I.M. (2005) Two-photon absorption in site-controlled InGaN/GaN quantum dots. Physica Status Solidi C, 2 (11). pp. 3843-3846. ISSN 1862-6351

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. and Sellers, I.R. and Semond, F. (2005) Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities. Physica Status Solidi A: Applications and Materials Science, 202 (14). pp. 2648-2652.

Martin, R.W. and Edwards, P.R. and Taylor, R.A. and Rice, J.H. and Na, J.H. and Robinson, J.W. and Smith, J.D. and Liu, C. and Watson, I.M. (2005) Luminescence properties of isolated InGaN/GaN quantum dots. Physica Status Solidi A - Applications and Materials Science, 202 (3). pp. 372-376.

Coquillat, D. and Torres, J. and dYerville, M.L.V. and Legros, R. and Lascaray, J.P. and Liu, C. and Watson, I.M. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2005) Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure. Physica Status Solidi A, 202 (4). pp. 652-655. ISSN 1862-6300

Chen, F. and Cartwright, A.N. and Liu, C. and Watson, I.M. (2005) Emission dynamics of red emitting InGaN/GaN single quantum wells. Physica Status Solidi C, 2 (7). pp. 2787-2790. ISSN 1862-6351

Katchkanov, V. and O'Donnell, K.P. and Mosselmans, J.F.W. and Hernandez, S. and Martin, R.W. and Nanishi, Y. and kurochi, M. and Watson, I.M. and van der Stricht, W. and Calleja, E. (2005) Extended x-ray absorption fine structure studies of InGaN epilayers. MRS Online Proceedings Library, 831. pp. 203-207. ISSN 0272-9172

Choi, H.W. and Gu, E. and Liu, C. and Griffin, C. and Girkin, J.M. and Watson, I.M. and Dawson, M.D. (2005) Fabrication of natural diamond microlenses by plasma etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23 (1). pp. 130-132. ISSN 1071-1023

Choi, H.W. and Jeon, C.W. and Liu, C. and Watson, I.M. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. and Tripathy, S. and Chua, S.J. (2005) InGaN nano-ring structures for high-efficiency light emitting diodes. Applied Physics Letters, 86 (2). ISSN 0003-6951

Choi, H.W. and Gu, E. and Liu, C. and Griffin, C. and Girkin, J.M. and Watson, I.M. and Dawson, M.D. (2005) Properties of natural diamond microlenses fabricated by plasma etching. Industrial Diamond Review, 2005 (2). pp. 29-32. ISSN 0019-8145

Hernandez, S. and Cusco, R. and Pastor, D. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Calleja, E. (2005) Raman-scattering study of the InGaN alloy over the whole composition range. Journal of Applied Physics, 98. 013511-03515. ISSN 0021-8979

Hernandez, S. and Wang, K. and Amabile, D. and Nogales, E. and Cusco, R. and Pastor, D. and Artus, L. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2005) Structural and optical properties of MOCVD AllnN epilayers. MRS Online Proceedings Library, 388-393 (6). pp. 388-393. ISSN 0272-9172

Watson, I.M. and Liu, C. and Gu, E. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2005) Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates. Applied Physics Letters, 87. p. 151901. ISSN 0003-6951

Deatcher, C.J. and Bejtka, K. and Martin, R.W. and Romani, S. and Kheyrandish, H. and Smith, L.M. and Rushworth, S.A. and Liu, C. and Cheong, M.G. and Watson, I.M. (2005) Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films. Semiconductor Science and Technology, 21 (9). pp. 1287-1295.

Edwards, P.R. and Martin, R.W. and Watson, I.M. and Liu, C. and Taylor, R.A. and Rice, J.H. and Na, J.H. and Robinson, J.W. and Smith, J.D. (2004) Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays. Applied Physics Letters, 85 (19). pp. 4281-4283. ISSN 0003-6951

Pecharroman-Gallego, R. and Martin, R.W. and Watson, I.M. (2004) Investigation of the unusual temperature dependence of ingan/gan quantum well photoluminescence over a range of emission energies. Journal of Physics D: Applied Physics, 37 (21). pp. 2954-2961. ISSN 0022-3727

Deatcher, C.J. and Liu, C. and Cheong, M.G. and Smith, L.M. and Rushworth, S. and Widdowson, A. and Watson, I.M. (2004) Silicon doping of gallium nitride using ditertiarybutylsilane. Chemical Vapor Deposition, 10 (4). pp. 187-190. ISSN 0948-1907

Martin, R.W. and Edwards, P.R. and O'Donnell, K.P. and Dawson, M.D. and Jeon, C.W. and Liu, C. and Rice, G.R. and Watson, I.M. (2004) Cathodoluminescence spectral mapping of III-nitride structures. Physica Status Solidi A - Applications and Materials Science, 201 (4). pp. 665-672.

Martin, R W and Edwards, P R and Liu, C and Deatcher, C J and Chong, H M H and De La Rue, R M and Watson, I M (2004) Cathodoluminescence spectral mapping of selectively grown III-nitride structures. Institute of Physics Conference Series, 179. pp. 135-138. ISSN 0951-3248

Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W. (2004) Dependence of the e 2 and a1(LO) modes on InN fraction in InGaN epilayers. MRS Online Proceedings Library, 831. ISSN 0272-9172

Correia, M.R. and Pereira, S.M.D.S. and Ferreira Pereira Lopes, E.M. and Frandon, J. and Watson, I.M. and Liu, C. and Alves, E. and Sequeira, A.D. and Franco, N. (2004) Direct evidence for strain inhomogeneity in inxGa1-xN epilayers by raman spectroscopy. Applied Physics Letters, 85 (12). pp. 2235-2237. ISSN 0003-6951

Choi, H.W. and Liu, C. and Gu, E. and McConnell, G. and Girkin, J.M. and Watson, I.M. and Dawson, M.D. (2004) GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses. Applied Physics Letters, 84 (13). pp. 2253-2255. ISSN 0003-6951

Correia, M.R. and Pereira, S.M.D.S. and Ferreira Pereira Lopes, E.M. and Ferreira, R.A.S. and Frandon, J. and Alves, E. and Watson, I.M. and Liu, C. and Morel, A. and Gil, B. (2004) Optical studies on the red luminescence of InGaN epilayers. Superlattices and Microstructures, 36 (4-6). pp. 625-632.

Gu, E. and Choi, H.W. and Liu, C. and Griffin, C. and Girkin, J.M. and Watson, I.M. and Dawson, M.D. and McConnell, G. and Gurney, A.M. (2004) Reflection/transmission confocal microscopy characterization of single-crystal diamond microlens arrays. Applied Physics Letters, 84 (15). pp. 2754-2756. ISSN 0003-6951

Barradas, N.P. and Alves, E. and Pereira, S.M.D.S. and Shvartsman, V.V. and Kholkin, A.L. and Ferreira Pereira Lopes, E.M. and O'Donnell, K.P. and Liu, C. and Deatcher, C.J. and Watson, I.M. and Mayer, M. (2004) Roughness in gaN/InGaN films and multilayers determined with Rutherford backscattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 217 (3). pp. 479-497. ISSN 0168-583X

Choi, H.W. and Edwards, P.R. and Liu, C. and Jeon, C.W. and Martin, R.W. and Watson, I.M. and Dawson, M.D. and Tripathy, P. and Chua, S.J. (2004) Sub-micron inGaN ring structures for high-efficiency LEDs. Physica Status Solidi C, 1 (2). pp. 202-205. ISSN 1862-6351

Edwards, P.R. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2003) Simultaneous composition mapping and hyperspectral cathodoluminescence imaging of InGaN epilayers. Physica Status Solidi C (7). pp. 2474-2477. ISSN 1862-6351

Deatcher, C.J. and Liu, C. and Pereira, S.M.D.S. and Lada, M. and Cullis, A.G. and Sung, Y.J. and Brandt, O. and Watson, I.M. (2003) In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures. Semiconductor Science and Technology, 18 (4). pp. 212-218. ISSN 0268-1242

Watson, I.M. and Jahn, U. and Dahr, S. and Brandt, O. and Grahn, H.T. and Ploog, K.H. (2003) Exciton localization and quantum efficiency - a comparative cathodoluminescence study of (In, Ga)N/GaN and GaN(Al,Ga)N quantum wells. Journal of Applied Physics, 93 (2). pp. 1048-1053. ISSN 0021-8979

Boyall, N.M. and Durose, K. and Watson, I.M. (2003) A method of normalizing cathodoluminescence images of electron transparent foils for thickness contrast applied to InGaN quantum wells. Journal of Microscopy, 209 (1). pp. 41-46. ISSN 0022-2720

Liu, C. and Deatcher, C.J. and Cheong, M.G. and Watson, I.M. (2003) Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy. Institute of Physics Conference Series, 180. pp. 657-660. ISSN 0951-3248

Liu, C. and Deatcher, C.J. and Cheong, M.G. and Watson, I.M. (2003) Atomic force microscopy of inGaN-based structures grown by metal-organic chemical vapour deposition. Institute of Physics Conference Series, 180. pp. 657-660. ISSN 0951-3248

Boyall, N.M. and Durose, K. and Liu, T.Y. and Trampert, A. and Watson, I.M. (2003) Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells. Institute of Physics Conference Series, 180. pp. 289-292. ISSN 0951-3248

Jahn, U. and Dahr, S. and Waltereit, P. and Kostial, H. and Watson, I.M. and Fujiwara, K. (2003) Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures. Institute of Physics Conference Series, 180. pp. 337-340. ISSN 0951-3248

Jahn, U. and Dhar, S. and Kostial, H. and Waltereit, P. and Scholz, F. and Watson, I.M. and Fujiwara, K. (2003) Low-energy electron-beam irradiation of GaN-based quantum well structures. Physica Status Solidi C. pp. 2223-2226. ISSN 1862-6351

Boyall, N.M. and Durose, K. and Liu, T.Y. and Trampert, A. and Liu, C. and Watson, I.M. (2003) Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors. Institute of Physics Conference Series, 179 (2). pp. 61-66. ISSN 0951-3248

Boyall, N.M. and Durose, K. and Watson, I.M. (2003) Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells. MRS Online Proceedings Library, 743. ISSN 0272-9172

Edwards, P.R. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2003) Simultaneous composition and cathodoluminescence spectral mapping of III-nitride structures. Journal of Physics: Conference Series (180). pp. 293-296. ISSN 1742-6596

Boyall, N.M. and Durose, K. and Watson, I.M. (2003) An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells. MRS Online Proceedings Library, 743. ISSN 0272-9172

Trager-Cowan, C. and Sweeney, F. and Wilkinson, A.J. and Watson, I.M. and Middleton, P.G. and O'Donnell, K.P. and Zubia, D. and Hersee, S.D. and Einfeldt, S. and Hommel, D. (2002) Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence. Physica Status Solidi C (1). pp. 532-536. ISSN 1862-6351

Martin, R.W. and Edwards, P.R. and O'Donnell, K.P. and Mackay, E.G. and Watson, I.M. (2002) Microcomposition and luminescence of InGaN emitters. Physica Status Solidi A, 192 (1). pp. 117-123. ISSN 1862-6300

Martin, R.W. and Kim, H.S. and Cho, Y. and Edwards, P.R. and Watson, I.M. and Sands, T. and Cheung, N.W. and Dawson, M.D. (2002) GaN microcavities formed by laser lift-off and plasma etching. Materials Science and Engineering B, 93 (1-3). pp. 98-101. ISSN 0921-5107

Pecharroman-Gallego, R. and Edwards, P.R. and Martin, R.W. and Watson, I.M. (2002) Investigations of phonon sidebands in InGaN/GaN multi-quantum well luminescence. Materials Science and Engineering B, 93 (1-3). pp. 94-97. ISSN 0921-5107

White, M.E. and O'Donnell, K.P. and Martin, R.W. and Pereira, S. and Deatcher, C.J. and Watson, I.M. (2002) Photoluminescence excitation spectroscopy of ingan epilayers. Materials Science and Engineering B, 93 (1-3). pp. 147-149. ISSN 0921-5107

Pereira, S. and Correia, M.R. and Pereira, E. and O'Donnell, K.P. and Alves, E. and Sequeira, A.D. and Franco, N. and Watson, I.M. and Deatcher, C.J. (2002) Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping. Applied Physics Letters, 80 (21). pp. 3913-3915. ISSN 0003-6951

Martin, R.W. and Edwards, P.R. and Pecharroman-Gallego, R. and Liu, C. and Deatcher, C.J. and Watson, I.M. and O'Donnell, K.P. (2002) Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells. Journal of Physics D: Applied Physics, 35 (7). pp. 604-608. ISSN 0022-3727

Pereira, S.M.D.S. and Correia, M.R. and Pereira, E. and O'Donnell, K.P. and Alves, E. and Barradas, N.P. and Sequeira, A.D. and Watson, I.M. and Liu, C. (2002) Degradation of structural and optical properties of InGaN/GaN multiple quantum wells. Journal of Applied Physics, 105. pp. 302-306. ISSN 0021-8979

Pereira, S.M.D.S. and Ferreira Pereira Lopes, E.M. and Alves, E. and Barradas, N.P. and O'Donnell, K.P. and Liu, C. and Deatcher, C.J. and Watson, I.M. (2002) Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixing. Applied Physics Letters, 81 (16). pp. 2950-2952. ISSN 0003-6951

Martin, R.W. and Edwards, P.R. and Kim, H.S. and Kim, K.S. and Kim, T. and Watson, I.M. and Dawson, M.D. and Cho, Y. and Sands, T. and Cheung, N.W. (2001) Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etch-back. Applied Physics Letters, 79 (19). pp. 3029-3031. ISSN 0003-6951

Kim, K.S. and Edwards, P.R. and Kim, H.S. and Martin, R.W. and Watson, I.M. and Dawson, M.D. (2001) Characterisation of optical properties in micro-patterned InGaN quantum wells. Physica Status Solidi B, 228 (1). pp. 169-172. ISSN 0370-1972

Pereira, S.M.D.S. and Correia, M.R. and Ferreira Pereira Lopes, E.M. and O'Donnell, K.P. and Trager-Cowan, C. and Sweeney, F. and Alves, E. and Sequeira, A.D. and Franco, N. and Watson, I.M. (2001) Depth resolved studies of indium content and strain in InGaN layers. Physica Status Solidi B, 228 (1). pp. 59-64. ISSN 0370-1972

Watson, I.M. and Liu, C. and Kim, K.S. and Kim, H.S. and Deatcher, C.J. and Girkin, J.M. and Dawson, M.D. and Edwards, P.R. and Trager-Cowan, C. and Martin, R.W. (2001) In situ and ex situ evaluation of mechanisms of lateral epitaxial overgrowth. Physica Status Solidi A, 188 (2). pp. 743-746. ISSN 1862-6300

Edwards, P.R. and Martin, R.W. and Kim, H.S. and Kim, K.S. and Chen, Y. and Watson, I.M. and Sands, T. and Cheung, N.W. and Dawson, M.D. (2001) InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching. Physica Status Solidi B, 228 (1). pp. 91-94. ISSN 0370-1972

Hurst, P. and Dawson, P. and Levetas, S.A. and Godfrey, M.J. and Watson, I.M. and Duggan, G. (2001) Temperature dependent optical properties of InGaN/GaN quantum well structures. Physica Status Solidi B, 228 (1). pp. 137-140. ISSN 0370-1972

Cunningham, W. and Gouldwell, A. and Lamb, G. and Roy, P. and Scott, J. and Mathieson, K. and Bates, R. and Smith, K.M. and Cusco, R. and Watson, I.M. and Glaser, M. and Rahman, M. (2001) Probing bulk and surface damage in widegap semiconductors. Journal of Physics D: Applied Physics, 34 (18). pp. 2748-2753. ISSN 0022-3727

Kim, T. and Martin, R.W. and Watson, I.M. and Dawson, M.D. and Krauss, T.F. and Marsh, J.H. and De La Rue, R.M. (2001) Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers. Materials Science and Engineering B, 82 (1-3). pp. 245-247. ISSN 0921-5107

Martin, R.W. and Edwards, P.R. and Pecharroman-Gallego, R. and Trager-Cowan, C. and Kim, T. and Kim, H.S. and Kim, K.S. and Watson, I.M. and Dawson, M.D. (2001) Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities. Physica Status Solidi A, 183 (1). pp. 145-149. ISSN 1862-6300

O'Donnell, K.P. and Martin, R.W. and White, M.E. and Tobin, M.J. and Mosselmans, J.F.W. and Watson, I.M. and Damiliano, B. and Grandjean, N. (2001) Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron radiation. MRS Online Proceedings Library, 639. G9.11. ISSN 0272-9172

Book Section

Rahman, F. and Khokhar, A. Z. and Parsons, K. and Watson, Ian (2013) Nanofabrication technologies for surface texturing of gallium nitride photonic crystal light-emitting diodes. In: Vistas in Nanofabrication. Pan Stanford Publishing, Singapore, pp. 75-96. ISBN 9789814364560

Zhang, Y. F. and McKnight, L. and Watson, I. M. and Gu, E. D. and Calvez, S. and Dawson, M. D. (2011) Compact large-cross-section GaN directional couplers. In: Proceedings of the 2011 IEEE Photonics Conference (PHO). IEEE, New York, pp. 407-408. ISBN 9781424489404

Herrnsdorf, J. and Guilhabert, B. and Chen, Y. and Laurand, N. and Gu, E. and Watson, I. M. and Dawson, M. D. and Kanibolotsky, A. L. and Skabara, P. J. and Mackintosh, A. R. and Pethrick, R. A. (2009) Free-standing light-emitting organic nanocomposite membranes. In: LEOS Annual Meeting Conference Proceedings, 2009. (LEOS '09). IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting . IEEE, pp. 377-378. ISBN 978-1-4244-3681-1

Trager-Cowan, Carol and Sweeney, Francis and Wilkinson, A.J. and Trimby, P.W. and Day, A.P. and Gholinia, A and Schmidt, N.H. and Parbrook, P.J. and Watson, Ian (2006) Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. In: GaN, AIN, InN and related materials. Materials research society symposium proceedings . Materials Research Society, Warrendale, pp. 677-682. ISBN 9781558998469

Gu, E. and Choi, H.W. and Liu, C. and Watson, I.M. and Girkin, J.M. and Dawson, M.D. (2004) Bi-focal and negative microlens arrays in hard optical materials. In: Lasers and Electro-Optics Society, 2004. LEOS 2004. IEEE, pp. 360-361. ISBN 9780780385573

Conference or Workshop Item

Massoubre, D. and Edwards, P. R. and Xie, E. and Richardson, E. and Watson, I. M. and Gu, E. and Martin, R. W. and Dawson, M. D. (2012) Individually-addressed planar nanoscale InGaN-based light emitters. In: 2012 IEEE Photonics Conference (IPC), 2012-09-23 - 2012-09-27, Burlingame, CA.

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Semond, F. and Watson, I.M. and Martin, R.W. (2006) Processing of the n-face of GaN: thinning, etching and morphological control. In: International Workshop on Nitride Semiconductors, 2006-10-22 - 2006-10-27, Kyoto, Japan. (Unpublished)

Itskos, G. and Heliotis, G. and Lagoudakis, P.G. and Feldmann, J. and Dawson, M.D. and Watson, I.M. and Bradley, D.D.C. and Murray, R. (2006) Non-radiative energy transfer from an inorganic quantum well to a polymer overlayer. In: 28th International Conference on the Physics of Semiconductors - ICPS 2006, 2006-07-24 - 2006-07-28, Vienna, Austria. (Unpublished)

Heliotis, G. and Itskos, G. and Lagoudakis, P.G. and Belton, C. and Dawson, M.D. and Watson, I.M. and Feldmann, J. and Murray, R. and Bradley, D.D.C. (2006) Efficient Forster coupling between inorganic and organic excitons. In: International conference on synthetic material, 2006-07-01, Dublin, Ireland. (Unpublished)

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Watson, I.M. and Edwards, P.R. and Martin, R.W. (2006) Processing of n-face GaN for microcavity applications. In: The E-MRS 2006 Spring Meeting, 2006-05-29 - 2006-06-02, Nice, France. (Unpublished)

Watson, I.M. and Heliotis, G. and Itskos, G. and Lagoudakis, P.G. and Feldmann, J. and Murray, R. and Bradley, D.D.C. and Dawson, M.D. (2006) Non-radiative energy transfer in hybrid structures combining InGaN single QWs and light-emitting polymers. In: 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), 2006-05-15 - 2006-05-19, Montpellier, France. (Unpublished)

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. and Kang, X.N. and Zhang, G.Y. (2006) Processing of n-face GaN for surface-emitting laser fabrication. In: 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), 2006-05-15 - 2006-05-19, Montpellier, France. (Unpublished)

Hernandez, S. and Wang, K. and Amabile, D. and Nogales, E. and Pastor, D. and Cusco, R. and Artus, L. and Martin, R. W. and O'Donnell, K. P. and Watson, I. M. and Network, RENiBE1 (2006) Structural and optical properties of MOCVD InAlN epilayers. In: Symposium on GaN, AIN, InN Related Materials, 2005-11-28 - 2005-12-02, Boston, MA.

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06, Sheffield.

Gu, E. and Choi, H.W. and Jeon, C.W. and Rice, G.B. and Liu, C. and Watson, I.M. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2003) Microstructure fabrication in gallium nitride, silicon carbide and diamond. In: Wide Bandgap Semiconductor Technology: Institute of Physics Day Meeting, 2003-09-17, London, United Kingdom. (Unpublished)

Watson, I.M. and Kim, K.S. and Kim, H.S. and Liu, C. and Deatcher, C.J. and Girkin, J.M. and Dawson, M.D. and Edwards, P.R. and Trager-Cowan, C. and Martin, R.W. (2001) In-situ reflectometry based studies of lateral epitaxial overgrowth. In: UK Nitrides Consortium Meeting, 2001-09-01, Glasgow, United Kingdom. (Unpublished)

Watson, I.M. and Dawson, M.D. and Deatcher, C.J. and Kim, H.S. and Kim, K.S. and Liu, C. (2001) In-situ reflectometry studies of GaN growth initiation, inGaN structure growth, and ELOG. In: European workshop on metalorganic vapour phase epitaxy, 2001-06-10 - 2001-06-13, Wrexham, United Kingdom. (Unpublished)

Kim, H.S. and Cho, Y. and Jeong, C.H. and Lee, D.H. and Watson, I.M. and Sands, T. and Dawson, M.D. and Yeom, G.Y. (2001) Ohmic contact formation to N-GaN fabricated by laser lift-off. In: E-MRS Spring Meeting 2001, 2001-06-06 - 2001-06-07, Strasbourg. (Unpublished)

Patent

Watson, I.M. (2004) Blue laser fabrication layer. To be ascertained.

This list was generated on Fri Oct 24 17:13:02 2014 BST.