InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers

Lee, J.K. and Cho, H. and Kim, B.H. and Park, S.H. and Gu, E. and Watson, I.M. and Dawson, M.D. (2006) InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers. New Physics: Korean Physical Society, 49 (1). pp. 407-411. ISSN 0374-4914 (http://www.kps.or.kr/home/kor/journal/library/abst...)

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Abstract

We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflectors (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

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