Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids

Coquillat, D. and Le Vassor D'Yerville, M. and Boubang, T.S.A. and Liu, C. and Bejtka, K. and Watson, I.M. and Edwards, P.R. and Martin, R.W. and Chong, H.M.H. and De La Rue, R.M. (2007) Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids. Physica Status Solidi C, 4. pp. 95-99. ISSN 1610-1642 (http://dx.doi.org/10.1002/pssc.200673561)

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Abstract

Selective area growth offers the promise of producing III-nitride photonic crystals (PhCs) without dry etching and concomitant surface damage. Two PhC structures were studied, one comprising an array of flat-topped GaN micropyramids with micrometre-scale periodicity, and the other made up of sharp-tipped pyramids with sub-micrometre periodicity. Angularly resolved reflection and transmission measurements revealed the presence of sharp resonances associated with resonant Bloch modes. As a result, the photonic band structure was determined along symmetry directions of the reciprocal lattice for the two PhC structures.

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