Realization of a semiconductor-based cavity soliton laser

Tanguy, Y. and Ackemann, T. and Firth, W.J. and Jäger, R. (2008) Realization of a semiconductor-based cavity soliton laser. Physical Review Letters, 100 (1). 013907. ISSN 1079-7114 (https://doi.org/10.1103/PhysRevLett.100.013907)

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Abstract

The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase insensitive and hence expected to be robust for all-optical processing applications. The mobility of these structures is also demonstrated.

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• Item metadata

  Item type:	Article
  ID code:	6207
  Dates:	Date Event 11 January 2008 Published
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics
  Depositing user:	Miss Darcy Spiller
  Date deposited:	02 Jun 2008
  Last modified:	09 Apr 2024 08:09
  Related URLs:	http://arxiv.org/PS_cache/arxiv/pdf/0709...
  URI:	https://strathprints.strath.ac.uk/id/eprint/6207