High-power vertical external-cavity surface-emitting lasers

Hopkins, J.M. and Calvez, S. and Kemp, A. and Hastie, J.E. and Smith, S.A. and MacLean, A.J. and Burns, D. and Dawson, M.D. (2006) High-power vertical external-cavity surface-emitting lasers. Physica Status Solidi C, 3 (3). pp. 380-385. ISSN 1610-1642 (https://doi.org/10.1002/pssc.200564182)

Full text not available in this repository.Request a copy

Abstract

Recently multiwatt power levels have been generated from Vertical External-Cavity Surface-Emitting Lasers in high quality spatially symmetric output beams. While these results are very impressive for a high brightness semiconductor source, they have largely been achieved in a wavelength band already well served by conventional solid-state lasers. To fully realise the potential of this technology, the wavelength versatility offered by the semiconductor materials must be utilized. Significant power scaling at wavelengths away from 1µm is a key technical challenge for the VECSEL developer.

CORE (COnnecting REpositories)