Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors

Boyall, N.M. and Durose, K. and Liu, T.Y. and Trampert, A. and Liu, C. and Watson, I.M. (2003) Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors. Institute of Physics Conference Series, 179 (2). pp. 61-66. ISSN 0951-3248

Abstract

Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.

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• Item metadata

  Item type:	Article
  ID code:	5251
  Dates:	Date Event 2003 Published
  Notes:	Paper presented at Electron Microscopy and Analysis Group Conference, Oxford, 2003.
  Subjects:	Science > Physics > Optics. Light Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Strathprints Administrator
  Date deposited:	30 Jan 2008
  Last modified:	08 Apr 2024 15:48
  URI:	https://strathprints.strath.ac.uk/id/eprint/5251