Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy

Sun, H.D. and Dawson, M.D. and Othman, M. and Yong, J.C.L. and Rorison, J.M. and Gilet, P. and Grenouillet, L. and Million, A. (2003) Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy. Applied Physics Letters, 82 (3). pp. 376-378. ISSN 0003-6951 (http://dx.doi.org/10.1063/1.1539921)

Full text not available in this repository.Request a copy

Abstract

We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%-1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells.

CORE (COnnecting REpositories)