Frequency/temperature characteristics of Gunn devices

Davies, R. and Gurney, William and Mircea, A. (1972) Frequency/temperature characteristics of Gunn devices. Electronics Letters, 8 (14). pp. 349-351. ISSN 0013-5194 (https://doi.org/10.1049/el:19720255)

Abstract

The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has limited the application of these devices. The letter outlines a program of experiments and computer simulations aimed at achieving an understanding of the basic ¿f/¿T mechanism and thus producing a deep stable oscillator. Our simulations successfully predict observed trends in the ¿f/¿T behaviour of Gunn devices with both alloyed metal and n+ regrown contacts. The results of our study show that stable oscillators with a small loaded Q factor and near maximum power output are realisable.

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• Item metadata

  Item type:	Article
  ID code:	41445
  Dates:	Date Event 13 July 1972 Published
  Subjects:	Technology > Electrical engineering. Electronics Nuclear engineering
  Department:	Faculty of Science > Mathematics and Statistics
  Depositing user:	Pure Administrator
  Date deposited:	15 Oct 2012 11:59
  Last modified:	08 Apr 2024 20:09
  URI:	https://strathprints.strath.ac.uk/id/eprint/41445