Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy

Novikov, S. V. and Staddon, C. R. and Luckert, F. and Edwards, P. R. and Martin, R. W. and Kent, A. J. and Foxon, C. T. (2012) Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy. Journal of Crystal Growth, 350 (1). pp. 80-84. ISSN 0022-0248 (https://doi.org/10.1016/j.jcrysgro.2011.12.028)

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Abstract

There is a significant difference in the lattice parameters of GaN and AlN and for many device applications AlxGa1-xN substrates would be preferable to either GaN or AlN. We have studied the growth of free-standing zinc-blende and wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick (similar to 10 mu m) zinc-blende and wurtzite AlxGa1-xN films were grown by PA-MBE on 2-in. GaAs (0 0 1) and GaAs (1 1 1)B substrates respectively and were removed from the GaAs substrate after the growth. We demonstrate that free-standing zinc-blende and wurtzite AlxGa1-xN wafers can be achieved by PA-MBE for a wide range of Al compositions. (C) 2011 Elsevier B.V. All rights reserved.

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